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2SA970_07

Description
low noise audio amplifier applications
File Size625KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA970_07 Overview

low noise audio amplifier applications

2SA970
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA970
Low Noise Audio Amplifier Applications
Low noise: NF = 3dB (typ.) R
G
= 100
Ω,
V
CE
=
−6
V, I
C
=
−100 μA,
f = 1 kHz
: NF = 0.5dB (typ.) R
G
= 1 kΩ, V
CE
=
−6
V, I
C
=
−100 μA,
f = 1 kHz
High DC current gain: h
FE
= 200~700
High breakdown voltage: V
CEO
=
−120
V
Low pulse noise. Low 1/f noise
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−120
−120
−5
−100
−20
300
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B
temperature/current/voltage and the significant change in
Weight: 0.21 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(Note)
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= −120
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
I
C
= −1
mA, I
B
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −10
mA, I
B
= −1
mA
V
CE
= −6
V, I
C
= −2
mA
V
CE
= −6
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
V
CE
= −6
V, I
C
= −0.1
mA, f
=
10 Hz,
R
G
=
10 kΩ
Noise figure
NF
V
CE
= −6
V, I
C
= −0.1
mA, f
=
1 kHz,
R
G
=
10 kΩ
V
CE
= −6
V, I
C
= −0.1
mA, f
=
1 kHz,
R
G
=
100
Ω
Min
−120
200
Typ.
−0.65
100
4.0
3
Max
−0.1
−0.1
700
−0.3
6
2
dB
V
V
MHz
pF
Unit
μA
μA
V
Note: h
FE
classification GR: 200~400, BL: 350~700
1
2007-11-01

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2SA970_07 2SA970
Description low noise audio amplifier applications low noise audio amplifier applications

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