2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
•
•
•
•
•
High voltage and high current
: V
CEO
= 50 V, I
C
= 150 mA (max)
Excellent h
FE
linearity :
h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
0.8 ± 0.05
1.2 ± 0.05
0.22 ± 0.05
1.2 ± 0.05
Unit: mm
Complementary to 2SA2154MFV
Lead (Pb) - free
0.4
0.4
High h
FE
:
h
FE
= 120~400
1
1
3
2
0.13 ± 0.05
Maximum Ratings
(Ta = 25°C)
0.5 ± 0.05
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
30
150*
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
VESM
JEDEC
JEITA
TOSHIBA
1.BASE
2.EMITTER
3.COLLECTOR
―
―
2-1L1A
* : Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6mm)
Mount Pad Dimensions (Reference)
0.5
0.45
Weight: 0.0015 g (typ.)
1.15
0.4
0.45
0.4
0.4
Unit: mm
1
2005-06-28
0.32 ± 0.05
0.80 ± 0.05
2SC6026MFV
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
120
⎯
60
⎯
Typ.
⎯
⎯
⎯
0.1
⎯
0.95
Max
0.1
0.1
400
0.25
⎯
3
Unit
µA
µA
⎯
V
MHz
pF
Note: h
FE
classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
Type Name
h
FE
Classification
HY
2
2005-06-28
2SC6026MFV
IC - VCE
120
2.0
COLLECTOR CURRENT IC (mA)
hFE - IC
1000
1.5
100
80
60
40
20
1.0
0.7
0.5
0.3
0.2
IB = 0.1 mA
DC CURRENT GAIN hFE
Ta = 100°C
25
100
-25
COMMON EMITTER Ta = 25°C
0
0
1
2
3
4
5
6
7
COLLECTOR-EMITTER VOLTAGE VCE (V)
10
0.1
COMMON EMITTER
VCE = 6 V
VCE
= 1 V
1
10
100
1000
COLLECTOR CURRENT IC (mA)
VCE(sat) - IC
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
VBE(sat) - IC
10
COMMON EMITTER
IC/ IB = 10
COMMON EMITTER
IC/IB = 10
Ta = 100°C
0.1
25
-25
25
1
-25
Ta = 100°C
0.01
0.1
1
10
100
1000
COLLECTOR CURRENT IC (mA)
0.1
0.1
1
10
100
1000
COLLECTOR CURRENT IC (mA)
IB - VBE
COLLECTOR POWER DISSIPATION PC (mV)
PC - Ta
250
Mounted on FR4 board
(24.5 mm × 24.5 mm × 1.6 mmt)
1000
BASE CURRENT IB (µA)
100
200
Ta = 100°C
150
10
25
-25
100
1
COMMON EMITTER
VCE = 6V
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
50
0
0
50
100
150
200
BASE-EMITTER VOLTAGE VBE (V)
AMBIENT TEMPERATURE Ta (°C)
3
2005-06-28
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