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DSC612RI2A-01KK

Description
LVCMOS Output Clock Oscillator, 0.002MHz Min, 100MHz Max
CategoryPassive components    oscillator   
File Size876KB,28 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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DSC612RI2A-01KK Overview

LVCMOS Output Clock Oscillator, 0.002MHz Min, 100MHz Max

DSC612RI2A-01KK Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid7441222991
package instructionVFLGA, 6 PIN
Reach Compliance Codecompliant
Other featuresSTANDBY; ENABLE/DISABLE FUNCTION
maximum descent time2 ns
Frequency Adjustment - MechanicalNO
frequency stability25%
Installation featuresSURFACE MOUNT
Number of terminals6
Maximum operating frequency100 MHz
Minimum operating frequency0.002 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Oscillator typeLVCMOS
Output load10 pF
Package body materialPLASTIC
Encapsulate equivalent codeSOLCC6,.08,32
physical size2.5mm x 2.0mm x 0.89mm
longest rise time2 ns
Filter levelAEC-Q100; MIL-STD-883E
Maximum supply voltage3.63 V
Minimum supply voltage1.71 V
surface mountYES
maximum symmetry55/45 %

DSC612RI2A-01KK Preview

DSC612
Two-Output Low Power MEMS Clock Generator
Features
• MEMS-Based Clock Generator Eliminates the
Need for External Crystal or Reference Clock
• Two LVCMOS Output Clocks: 2 kHz to 100 MHz
• Low Power Consumption: ~5 mA (Both Outputs
Active)
• Wide Supply Voltage Range: 1.71V to 3.63V
• Ultra-Small Package Sizes:
- 1.6 mm x 1.2 mm
- 2.0 mm x 1.6 mm
- 2.5 mm x 2.0 mm
• High Frequency Stability: ±20 ppm, ±25 ppm,
±50 ppm
• Wide Temperature Range:
- Automotive: –40°C to +125°C
- Ext. Industrial: –40°C to +105°C
- Industrial: –40°C to +85°C
- Commercial: –20°C to +70°C
• Excellent Shock and Vibration Immunity:
- Shock: Qualified to MIL-STD-883E Method
2002.3. Test Condition G (30,000g)
- Vibration: Qualified to MIL-STD-883E Method
2007.2, Test Condition C (70g)
• High Reliability
• Lead-Free and RoHS-Compliant
• Automotive Option AEC-Q100 Available
General Description
The DSC612 is a MEMS low power, ultra-small
footprint, crystal-less family of clock generators. The
DSC612 family is factory-configurable and generates
up to two independent LVCMOS outputs. Each output
can be configured to generate any frequency from
2 kHz to 100 MHz.
The DSC612 implements Microchip’s proven
PureSilicon™ MEMS technology to provide low jitter
and high stability across a wide range of supply
voltages and temperatures. By eliminating the external
quartz crystal, Microchip’s crystal-less™ clock
generators significantly enhance reliability and
accelerate product development.
The DSC612 has two control inputs that can be
configured to function as output enable/disable,
standby, sleep, spread spectrum enable, and
frequency select. The DSC612 is available in space
saving 6-pin, 1.6 mm x 1.2 mm, 2.0 mm x 1.6 mm, and
2.5 mm x 2.0 mm VFLGA plastic packages.
The DSC612 spread spectrum function includes both
center and down spreading, and is explained further in
the
Spread Spectrum
section.
The DSC612 is a highly configurable device and is
factory programmed to meet the customer’s needs.
Microchip’s
ClockWorks Configurator
must be used to
choose the necessary options, create the final part
number, data sheet, and order samples.
Applications
• Low Power/Portable Applications: IoT,
Embedded/Smart Devices
• Consumer: Home Healthcare, Fitness Devices,
Home Automation
• Industrial: Building/Factory Automation,
Surveillance Cameras
Package Type
DSC612
6-Lead VFLGA
(Top View)
OE/STDBY/SLEEP/SSEN/FS/NC
1
6 VDD
OE/STDBY/SLEEP/FS/NC
2
5 CLK2
VSS
3
4 CLK1
2018 Microchip Technology Inc.
DS20006023A-page 1
DSC612
Functional Block Diagram
PIN1
PIN2
DIGITAL
CONTROL
SUPPLY
REGULATION
VDD
OUT DIV1
MEMS
RESONATOR
TEMP SENSOR +
CONTROL &
COMPENSATION
CLK1
PLL1
OUT DIV2
CLK2
PLL2
DS20006023A-page 2
2018 Microchip Technology Inc.
DSC612
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .......................................................................................................................................... –0.3V to +4.0V
Input Voltage .....................................................................................................................................–0.3V to V
DD
+ 0.3V
ESD Protection (HBM) ............................................................................................................................................... 4 kV
ESD Protection (MM) ................................................................................................................................................400V
ESD Protection (CDM) ............................................................................................................................................... 2 kV
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
TABLE 1-1:
Parameter
Supply Voltage
ELECTRICAL CHARACTERISTICS
Symbol
V
DD
I
DD
I
DDSL
I
DD32k
I
STDBY
Min.
1.71
0.7 x
V
DD
0.8 x
V
DD
Typ.
5
3
1.4
1.0
1.5
1.0
300
Max.
3.63
6
±20
±25
±50
±5
±1
1.5
0.3 x
V
DD
200 + 2
Periods
Electrical Characteristics:
V
DD
= 1.8V ±5% to 3.3V ±10%; T
A
= –40°C to +125°C, unless noted.
Units
V
mA
mA
mA
µA
Conditions
Note 1
f
CLK1
= 27 MHz, f
CLK2
= 25 MHz,
V
DD
= 1.8V, No Load
CLK2 = SLEEP, f
CLK1
= 25 MHz,
V
DD
= 1.8V, No Load
CLK2 = SLEEP, f
CLK1
=
32.768 kHz, V
DD
= 1.8V, No Load
V
DD
= 1.8V/2.5V
V
DD
= 3.3V
All temperature ranges
1st year @ +25°C
Per year after the first year
From 90% V
DD
to valid clock
output, T = +25°C
Input logic high
V
Input logic low
ns
µs
kΩ
V
Note 5
Note 6
Note 7
I = 6 mA (high drive) or I = 3 mA
(standard drive)
I = –6 mA (high drive) or I = –3 mA
(standard drive)
Active Supply Current
Active Supply Current (Sleep
Mode, 1 PLL Off)
Active Supply Current
(32.768 kHz Output Only)
Standby Supply Current,
Note 2
Frequency Stability,
Note 3
∆f
ppm
Aging
Startup Time
∆f
t
SU
V
IH
ppm
ms
Input Logic Levels,
Note 4
V
IL
Output Disable Time
Output Enable Time
Enable Pull-Up Resistor
Output Logic Levels
V
OLY
t
DA
t
EN
V
OHY
0.2 x
V
DD
2018 Microchip Technology Inc.
DS20006023A-page 3
DSC612
TABLE 1-1:
Parameter
ELECTRICAL CHARACTERISTICS (CONTINUED)
Symbol
Min.
t
RY1
/t
FY1
Typ.
1.2
0.6
1.0
0.5
17
14
9
120
100
80
105
90
70
Max.
2.0
1.2
1.5
1.0
100
55
ps
ps
ps
Units
ns
ns
ns
ns
MHz
%
Conditions
Standard drive 20% - 80% C
L
=
10 pF, V
DD
= 1.8V
Standard drive 20% - 80% C
L
=
10 pF, V
DD
= 2.5V/3.3V
High drive 20% - 80% C
L
= 15 pF,
V
DD
= 1.8V
High drive 20% - 80% C
L
= 15 pF,
V
DD
= 2.5V/3.3V
f
CLK1
= 24 MHz, f
CLK2
= 27 MHz,
V
DD
= 1.8V
f
CLK1
= 24 MHz, f
CLK2
= 27 MHz,
V
DD
= 3.3V
f
CLK1
= 27 MHz, f
CLK2
= 27 MHz or
32.768 kHz, V
DD
= 3.3V
f
CLK1
= 24 MHz, f
CLK2
= 27 MHz,
V
DD
= 1.8V
f
CLK1
= 24 MHz, f
CLK2
= 27 MHz,
V
DD
= 3.3V
f
CLK1
= 27 MHz, f
CLK2
= 27 MHz or
32.768 kHz, V
DD
= 3.3V
f
CLK1
= 24 MHz, f
CLK2
= 27 MHz,
V
DD
= 1.8V
f
CLK1
= 24 MHz, f
CLK2
= 27 MHz,
V
DD
= 3.3V
f
CLK1
= 27 MHz, f
CLK2
= 27 MHz or
32.768 kHz, V
DD
= 3.3V
Electrical Characteristics:
V
DD
= 1.8V ±5% to 3.3V ±10%; T
A
= –40°C to +125°C, unless noted.
Output Transition Time, Rise
Time/Fall Time
t
RY2
/t
FY2
Frequency
Output Duty Cycle
f0
SYM
0.002
45
Period Jitter, RMS
J
PER
Period Jitter, Peak-to-Peak
J
PER
Cycle-to-Cycle Jitter (peak)
J
Cy-Cy
Note 1:
2:
3:
4:
5:
6:
7:
V
DD
pin should be filtered with a 0.1 µF capacitor.
Excludes input pull-up current.
Includes frequency variations due to initial tolerance, temperature, and power supply voltage.
Input waveform must be monotonic with rise/fall time < 10 ms.
Output disable time takes up to two Periods of the output waveform, plus 200 ns.
For parts configured with OE, not Standby.
Output is enabled if pad is floated or not connected.
DS20006023A-page 4
2018 Microchip Technology Inc.
DSC612
TEMPERATURE SPECIFICATIONS (Note
1)
Parameters
Temperature Ranges
Junction Operating Temperature
Storage Temperature Range
Lead Temperature
Note 1:
T
J
T
S
–55
+260
+150
+150
°C
°C
°C
Soldering, 40s
Sym.
Min.
Typ.
Max.
Units
Conditions
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.
2018 Microchip Technology Inc.
DS20006023A-page 5
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