BC183 NPN General Purpose Amplifer
June 2007
BC183
NPN General Purpose Amplifer
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
, T
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (T
a
=25°C)
T
C
=25°C unless otherwise noted
Parameter
Value
45
30
5
100
350
- 55 ~ 150
Units
V
V
V
mA
mW
°C
Storage Junction Temperature Range
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
OB
f
T
h
fe
NF
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current gain Bandwidth Product
Small Signal Current Gain
Noise Figure
Conditions
I
C
= 10μA
I
C
= 2mA
I
E
= 10μA
V
CB
= 30V
V
EB
= 4.0V
V
CE
= 5V, I
C
= 10μA
V
CE
= 5V, I
C
= 100mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 10mA,
f = 100MHz
V
CE
= 5V, I
C
= 2mA
f = 1KHz
V
CE
= 5V, I
C
= 200mA
R
G
= 2KΩ, f = 1KHz
Min.
45
30
5
Max
Units
V
V
V
15
15
40
80
0.25
0.6
1.2
0.55
0.7
5
150
125
900
10
nA
nA
V
V
V
pF
MHz
dB
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC183 Rev. A
BC183 NPN General Purpose Amplifer
Typical Characteristics
1200
1000
800
600
25 °C
125 °C
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
V
CE
= 5.0V
0.3
0.25
0.2
125 °C
β
= 10
0.15
0.1
0.05
0.1
25 °C
- 40 °C
400
- 40 °C
200
0
0.01 0.03
0.1 0.3
1
3
10
30
I
C
- COLLECTOR CURRENT (mA)
100
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Figure 1. Typical Pulsed Current Gain
vs Collector Current
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
1
- 40 °C
1
0.8
0.6
125°C
- 40 °C
25 °C
0.8
0.6
0.4
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
25 °C
125°C
0.4
V
CE
= 5.0 V
β
= 10
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
40
Figure 3. Base-Emitter Saturation Voltage
vs Collector Curent
Figure 4. Base-Emitter ON Voltage
vs Collector Current
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 45V
CAPACITANCE (pF)
5
f = 1.0 MHz
4
3
C
1
2
1
0
C ob
0.1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Bias Voltage
2
BC183 Rev. A
www.fairchildsemi.com
tm
BC183 NPN General Purpose Amplifer
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT
®
FAST
®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC
®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I23
3
BC183 Rev. A
www.fairchildsemi.com
Renesas Electronics MCUs
京公网安备 11010802033920号
EEWORLD
