DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP54; BCP55; BCP56
NPN medium power transistors
Product specification
Supersedes data of 1997 Apr 08
1999 Apr 08
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Switching.
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BCP51, BCP52 and BCP53.
handbook, halfpage
BCP54; BCP55; BCP56
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
3
1
Top view
2
3
MAM287
Fig.1
Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BCP54
BCP55
BCP56
V
CEO
collector-emitter voltage
BCP54
BCP55
BCP56
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
45
60
80
5
1
1.5
0.2
1.33
+150
150
+150
V
V
V
V
A
A
A
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
45
60
100
V
V
V
MIN.
MAX.
UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
NPN medium power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BCP54; BCP55; BCP56
CONDITIONS
note 1
VALUE
94
13
UNIT
K/W
K/W
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
I
C
= 500 mA; V
CE
= 2 V
h
FE
DC current gain
BCP55-10; 56-10
BCP54-16; 55-16; 56-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 0.5 A; I
B
= 50 mA
I
C
= 0.5 A; V
CE
= 2 V
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
63
100
−
−
−
−
MIN.
−
−
−
25
63
25
TYP.
−
−
−
−
−
−
−
−
−
−
−
130
−
160
250
500
1
−
1.6
mV
V
MHz
MAX.
100
10
100
−
250
−
UNIT
nA
µA
nA
1999 Apr 08
3
Philips Semiconductors
Product specification
NPN medium power transistors
PACKAGE OUTLINE
BCP54; BCP55; BCP56
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
1999 Apr 08
4
Philips Semiconductors
Product specification
NPN medium power transistors
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
BCP54; BCP55; BCP56
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 08
5
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