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BCP56T1SERIES

Description
medium power npn silicon high current transistor surface mount
File Size201KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BCP56T1SERIES Overview

medium power npn silicon high current transistor surface mount

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP56T1/D
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
High Current: 1.0 Amp
The SOT-223 package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
PNP Complement is BCP53T1
COLLECTOR 2,4
BCP56T1
SERIES
Motorola Preferred Device
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
BASE
1
EMITTER 3
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Operating and Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, Tstg
Value
80
100
5
1
1.5
12
– 65 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
DEVICE MARKING
BCP56T1 = BH
BCP56-10T1 = BK
BCP56-16T1 = BL
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction-to-Ambient (surface mounted)
Maximum Temperature for Soldering Purposes
Time in Solder Bath
Symbol
R
θJA
TL
Max
83.3
260
10
Unit
°C/W
°C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal
©
Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1

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