BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDX33, BDX33A, BDX33B, BDX33C and
BDX33D
70 W at 25°C Case Temperature
B
TO-220 PACKAGE
(TOP VIEW)
q
q
q
1
2
3
10 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 3 A
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDX34
BDX34A
Collector-base voltage (I
E
= 0)
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
Collector-emitter voltage (I
B
= 0)
BDX34B
BDX34C
BDX34D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free air temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
J
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-10
-0.3
70
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
BDX34
V
(BR)CEO
Collector-emitter
breakdown voltage
BDX34A
I
C
= -100 mA
I
B
= 0
(see Note 3)
BDX34B
BDX34C
BDX34D
V
CE
= -30 V
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
I
CEO
Collector-emitter
cut-off current
V
CE
= -60 V
V
CE
= -30 V
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
CBO
Collector cut-off
current
V
CB
= -120 V
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
I
EBO
Emitter cut-off
current
V
EB
=
V
CE
=
h
FE
Forward current
transfer ratio
V
CE
=
V
CE
=
V
CE
=
V
CE
=
V
CE
=
V
BE(on)
Base-emitter
voltage
V
CE
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
V
CE(sat)
Collector-emitter
saturation voltage
I
B
=
I
B
=
I
B
=
I
B
=
V
EC
Parallel diode
forward voltage
I
E
=
-5 V
-3 V
-3 V
-3 V
-3 V
-3 V
-3 V
-3 V
-3 V
-3 V
-3 V
-8 mA
-8 mA
-6 mA
-6 mA
-6 mA
-8 A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= -4 A
I
C
= -4 A
I
C
= -3 A
I
C
= -3 A
I
C
= -3 A
I
C
= -4 A
I
C
= -4 A
I
C
= -3 A
I
C
= -3 A
I
C
= -3 A
I
C
= -4 A
I
C
= -4 A
I
C
= -3 A
I
C
= -3 A
I
C
= -3 A
I
B
= 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
750
750
750
750
750
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
-2.5
-4
V
V
V
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
MIN
-45
-60
-80
-100
-120
-0.5
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-1
-1
-1
-1
-1
-5
-5
-5
-5
-5
-10
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
PRODUCT
INFORMATION
2
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.78
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -3 A
V
BE(off)
= 3.5 V
I
B(on)
= -12 mA
R
L
= 10
Ω
†
MIN
I
B(off)
= 12 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
3
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
50000
TCS135AF
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
TCS135AH
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
-1·5
1000
-1·0
V
CE
= -3 V
t
p
= 300 µs, duty cycle < 2%
100
-0·5
-1·0
I
C
- Collector Current - A
-10
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
-0·5
-0·5
-1·0
I
C
- Collector Current - A
-10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS135AJ
-2·5
-2·0
-1·5
-1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
I
C
- Collector Current - A
-10
Figure 3.
PRODUCT
INFORMATION
4
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS130AB
Figure 4.
PRODUCT
INFORMATION
5
Microcontroller MCU
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