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BD675

Description
4A, 45V, NPN, Si, POWER TRANSISTOR, TO-126
CategoryDiscrete semiconductor    The transistor   
File Size179KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BD675 Overview

4A, 45V, NPN, Si, POWER TRANSISTOR, TO-126

BD675 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1407135805
Reach Compliance Codenot_compliant
ECCN codeEAR99
YTEOL0
Shell connectionISOLATED
Maximum collector current (IC)4 A
Collector-emitter maximum voltage45 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment40 W
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max2.5 V

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