2SK2366-Z datasheet, PDF - EEWORLD Datasheet

2SK2366-Z: DescriptionPower Field-Effect Transistor, 10A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size285KB，6 Pages; ManufacturerNEC Electronics

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2SK2366-Z Overview

Power Field-Effect Transistor, 10A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

Parameter Name	Attribute value
Maker	NEC Electronics
Parts packaging code	SFM
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	143 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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