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PEMD24; PUMD24
NPN/PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Rev. 01 — 2 May 2005
Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET).
Table 1:
Product overview
Package
Philips
PEMD24
PUMD24
SOT666
SOT363
JEITA
-
SC-88
PNP/PNP
complement
PEMB24
PUMB24
NPN/NPN
complement
PEMH24
PUMH24
Type number
1.2 Features
s
s
s
s
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
1.3 Applications
s
Low current peripheral driver
s
Control of IC inputs
s
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2:
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
70
0.8
Typ
-
-
100
1
Max
50
20
130
1.2
Unit
V
mA
kΩ
Philips Semiconductors
PEMD24; PUMD24
NPN/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2. Pinning information
Table 3:
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
001aab555
TR1
R2
R1
R1
R2
TR2
Simplified outline
6
5
4
Symbol
6
5
4
1
2
3
006aaa143
3. Ordering information
Table 4:
Ordering information
Package
Name
PEMD24
PUMD24
-
SC-88
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5:
PEMD24
PUMD24
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
6N
T8*
Type number
9397 750 14457
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 May 2005
2 of 10
Philips Semiconductors
PEMD24; PUMD24
NPN/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
-
Max
50
50
10
+40
−10
+10
−40
20
100
200
200
+150
150
+150
Unit
V
V
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
Per transistor; for the PNP transistor with negative polarity
T
amb
≤
25
°C
[1]
[1] [2]
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
[1]
[1] [2]
-
-
300
300
mW
mW
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
9397 750 14457
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 May 2005
3 of 10
Philips Semiconductors
PEMD24; PUMD24
NPN/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
6. Thermal characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
in free air
[1]
[1] [2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
in free air
[1]
[1] [2]
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
I
C
= 5 mA; I
B
= 0.25 mA
Min
-
-
-
-
80
-
-
3
70
0.8
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
-
-
-
-
2.5
3
pF
pF
Typ
-
-
-
-
-
-
1.1
1.5
100
1
Max
100
1
50
50
-
150
0.5
-
130
1.2
mV
V
V
kΩ
Unit
nA
µA
µA
µA
Per transistor; for the PNP transistor with negative polarity
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
off-state input voltage V
CE
= 5 V; I
C
= 100
µA
on-state input voltage V
CE
= 0.3 V; I
C
= 1 mA
bias resistor 1 (input)
bias resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
9397 750 14457
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 May 2005
4 of 10
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