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CYD04S18V18-200BBXI

Description
sram 4M sync dual port 256kx18 90nm ind
Categorystorage    storage   
File Size1MB,52 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CYD04S18V18-200BBXI Overview

sram 4M sync dual port 256kx18 90nm ind

CYD04S18V18-200BBXI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCypress Semiconductor
Parts packaging codeBGA
package instruction17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256
Contacts256
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time9 ns
Other featuresPIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeS-PBGA-B256
JESD-609 codee1
length17 mm
memory density4718592 bit
Memory IC TypeDUAL-PORT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals256
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.5/1.8 V
Certification statusNot Qualified
Maximum seat height1.7 mm
Maximum standby current0.17 A
Minimum standby current1.4 V
Maximum slew rate0.62 mA
Maximum supply voltage (Vsup)1.58 V
Minimum supply voltage (Vsup)1.42 V
Nominal supply voltage (Vsup)1.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width17 mm
Base Number Matches1
FullFlex
FullFlex™ Synchronous SDR Dual Port SRAM
Features
Functional Description
The FullFlex™ dual port SRAM families consist of 2 Mbit, 4 Mbit,
9 Mbit, 18 Mbit, and 36 Mbit synchronous, true dual port static
RAMs that are high speed, low power 1.8V or 1.5V CMOS. Two
ports are provided, enabling simultaneous access to the array.
Simultaneous access to a location triggers deterministic access
control. For FullFlex72 these ports operate independently with
72-bit bus widths and each port is independently configured for
two pipelined stages. Each port is also configured to operate in
pipelined or flow through mode.
The advanced features include the following:
True dual port memory enables simultaneous access to the
shared array from each port
Synchronous pipelined operation with Single Data Rate (SDR)
operation on each port
SDR interface at 200 MHz
Up to 28.8 Gb/s bandwidth (200 MHz x 72 bit x 2 ports)
Selectable pipelined or flow-through mode
1.5V or 1.8V core power supply
Commercial and Industrial temperature
IEEE 1149.1 JTAG boundary scan
Available in 484-Ball PBGA (x72) and 256-Ball FBGA (x36 and
x18) packages
FullFlex72 family
36 Mbit: 512K x 72 (CYD36S72V18)
18 Mbit: 256K x 72 (CYD18S72V18)
9 Mbit: 128K x 72 (CYD09S72V18)
4 Mbit: 64K x 72 (CYD04S72V18)
FullFlex36 family
36 Mbit: 1M x 36 (CYD36S36V18)
18 Mbit: 512K x 36 (CYD18S36V18)
9 Mbit: 256K x 36 (CYD09S36V18)
4 Mbit: 128K x 36 (CYD04S36V18)
2 Mbit: 64K x 36 (CYD02S36V18)
FullFlex18 family
36 Mbit: 2M x 18 (CYD36S18V18)
18 Mbit: 1M x 18 (CYD18S18V18)
9 Mbit: 512K x 18 (CYD09S18V18)
4 Mbit: 256K x 18 (CYD04S18V18)
Built in deterministic access control to manage address colli-
sions
Deterministic flag output upon collision detection
Collision detection on back-to-back clock cycles
First Busy Address readback
Advanced features for improved high speed data transfer and
flexibility
Variable Impedance Matching (VIM)
Echo clocks
Selectable LVTTL (3.3V), Extended HSTL (1.4V–1.9V), 1.8V
LVCMOS, or 2.5V LVCMOS IO on each port
Burst counters for sequential memory access
Mailbox with interrupt flags for message passing
Dual Chip Enables for easy depth expansion
Built in deterministic access control to manage address colli-
sions during simultaneous access to the same memory location
Variable Impedance Matching (VIM) to improve data trans-
mission by matching the output driver impedance to the line
impedance
Echo clocks to improve data transfer
To reduce the static power consumption, chip enables power
down the internal circuitry. The number of latency cycles before
a change in CE0 or CE1 enables or disables the databus
matches the number of cycles of read latency selected for the
device. For a valid write or read to occur, activate both chip
enable inputs on a port.
Each port contains an optional burst counter on the input address
register. After externally loading the counter with the initial
address, the counter increments the address internally.
Additional device features include a mask register and a mirror
register to control counter increments and wrap around. The
counter interrupt (CNTINT) flags notify the host that the counter
reaches maximum count value on the next clock cycle. The host
reads the burst counter internal address, mask register address,
and busy address on the address lines. The host also loads the
counter with the address stored in the mirror register by using the
retransmit functionality. Mailbox interrupt flags are used for
message passing, and JTAG boundary scan and asynchronous
Master Reset (MRST) are also available. The
Logic Block
Diagram
on page 2 shows these features.
The FullFlex72 is offered in a 484-Ball plastic BGA package. The
FullFlex36 and FullFlex18 are available in 256-Ball fine pitch
BGA package.
Cypress Semiconductor Corporation
Document Number: 38-06082 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 15, 2008
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