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CZTA42

Description
surface mount complementary high voltage silicon transistor
CategoryDiscrete semiconductor    The transistor   
File Size70KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CZTA42 Overview

surface mount complementary high voltage silicon transistor

CZTA42 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionPLASTIC PACKAGE-4
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
CZTA42 NPN
CZTA92 PNP
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA42,
CZTA92 types are complementary surface
mount epoxy molded silicon planar epitaxial
transistors designed for high voltage
applications.
MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ
JA
-65 to +150
62.5
°C
°C/W
VCBO
VCEO
VEBO
IC
PD
CZTA42
300
300
6.0
500
2.0
CZTA92
300
300
5.0
UNITS
V
V
V
mA
W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
CZTA42
SYMBOL
ICBO
IEBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
TEST CONDITIONS
VCB=200V
VBE=6.0V
VBE=3.0V
IC=100µA
IC=1.0mA
IE=100µA
IC=20mA, IB=2.0mA
IC=20mA, IB=2.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V,
VCE=20V,
IC=30mA
IC=10mA, f=100MHz
300
300
6.0
0.5
0.9
25
40
40
50
3.0
25
40
25
50
6.0
MHz
pF
MIN
MAX
100
100
-
300
300
5.0
0.5
0.9
CZTA92
MIN
MAX
250
-
100
UNITS
nA
nA
nA
V
V
V
V
V
VCB=20V, IE=0, f=1.0MHz
R2 (17-June 2004)

CZTA42 Related Products

CZTA42 CZTA92
Description surface mount complementary high voltage silicon transistor surface mount complementary high voltage silicon transistor
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Central Semiconductor Central Semiconductor
package instruction PLASTIC PACKAGE-4 PLASTIC PACKAGE-4
Contacts 4 4
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 300 V 300 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 25
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN PNP
Maximum power dissipation(Abs) 2 W 2 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz
Base Number Matches 1 1
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