Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.6±0.15
s
Features
q
q
q
q
0.4
0.8±0.1
0.4
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
High emitter to base voltage V
EBO
.
Low noise voltage NV.
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
50
40
15
100
50
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol :
1Z
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
50
40
15
400
0.05
120
2000
0.2
V
MHz
min
typ
max
100
1
Unit
nA
µA
V
V
V
*
h
FE
Rank classification
R
400 ~ 800
S
T
h
FE
600 ~ 1200 1000 ~ 2000
Rank
0 to 0.1
0.2±0.1
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta=25˚C)
0.2
–0.05
+0.1
1
Transistor
P
C
— Ta
150
160
Ta=25˚C
140
125
100
25˚C
Ta=75˚C
80
–25˚C
2SD2345
I
C
— V
CE
120
V
CE
=10V
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
120
100
80
60
40
20
I
B
=100µA
90µA
80µA
70µA
60µA
50µA
40µA
30µA
20µA
10µA
100
75
Collector current I
C
(mA)
60
50
40
25
20
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
Ta=75˚C
0.1
0.03
0.01
0.1
25˚C
–25˚C
I
C
/I
B
=10
1800
h
FE
— I
C
250
V
CE
=10V
f
T
— I
E
V
CB
=10V
Ta=25˚C
Forward current transfer ratio h
FE
1500
Transition frequency f
T
(MHz)
30
100
200
1200
Ta=75˚C
900
25˚C
–25˚C
600
150
100
300
50
0.3
1
3
10
30
100
0
0.1
0.3
1
3
10
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
8
100
I
E
=0
f=1MHz
Ta=25˚C
NV — I
C
V
CE
=10V
G
V
=80dB
Function=FLAT
Ta=25˚C
R
g
=100kΩ
60
22kΩ
40
5kΩ
20
100
NV — V
CE
Collector output capacitance C
ob
(pF)
7
6
5
4
3
2
1
0
1
3
10
R
g
=100kΩ
Noise voltage NV (mV)
Noise voltage NV (mV)
80
80
60
22kΩ
40
5kΩ
20
30
100
0
0.01
0
0.03
0.1
0.3
1
1
3
10
I
C
=1mA
G
V
=80dB
Function=FLAT
Ta=25˚C
30
100
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
Collector to emitter voltage V
CE
(V)
2
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