EEWORLDEEWORLDEEWORLD

Part Number

Search

B45196L5684M106

Description
Tantalum Capacitor, Polarized, Tantalum (dry/solid), 25V, 20% +Tol, 20% -Tol, 0.68uF, Surface Mount, 1206, CHIP
CategoryPassive components    capacitor   
File Size33KB,1 Pages
ManufacturerKEMET
Websitehttp://www.kemet.com
Environmental Compliance
Download Datasheet Parametric View All

B45196L5684M106 Overview

Tantalum Capacitor, Polarized, Tantalum (dry/solid), 25V, 20% +Tol, 20% -Tol, 0.68uF, Surface Mount, 1206, CHIP

B45196L5684M106 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerKEMET
package instruction, 1206
Reach Compliance Codecompliant
ECCN codeEAR99
capacitance0.68 µF
Capacitor typeTANTALUM CAPACITOR
dielectric materialsTANTALUM (DRY/SOLID)
high1.6 mm
JESD-609 codee3
leakage current0.0005 mA
length3.2 mm
Manufacturer's serial numberB45196L5684M106
Installation featuresSURFACE MOUNT
negative tolerance20%
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package shapeRECTANGULAR PACKAGE
Package formSMT
method of packingTR
polarityPOLARIZED
positive tolerance20%
Rated (DC) voltage (URdc)25 V
seriesB45-AUTOMOTIVE
size code1206
surface mountYES
Delta tangent0.04
Terminal surfaceMatte Tin (Sn)
Terminal shapeJ BEND
width1.6 mm
Base Number Matches1
B45196L5684M106
aka T495A684M025ZTA10K7280
Capacitor, tantalum, 0.68 uF, 3216, +/-20% Tol, 25V@85C
Top View
Pola rity
+
Bottom View
Ind ic a tor
Kem et m a y c onstruc t
a term ina l slot on the
p ositive sid e a t
Kem ets Op tion
F
L
H
K
W
End View
Dimensions (mm)
ID
L
W
H
K
F
S
S
Sid e View
S
Specifications
Tolerance
+/-0.2
+/-0.2
+/-0.2
typ
+/-0.1
+/-0.3
Manufacturer:
Capacitance:
Voltage DC @ 85C:
Voltage DC @ 105C:
Voltage DC @ 125C:
Tolerance:
Application:
Temperature Range:
Body Type:
Construction:
Footprint:
Termination:
Leakage Current:
Dissipation Factor:
Impedance @ 100kHz:
Package Kind:
Package Quantity:
KEMET
0.68 uF
25V
20.5V
16V
+/-20%
Automotive
-55/+125C
Molded Chip
Std Chip-MnO2
3216
Tin
0.5 uA
4%
10 Ohm
T&R
9000
Dimension
3.2
1.6
1.6
1.3
1.2
0.8
Notes:
-In polarity stripe, at KEMET's option, type may be indicated:
see catalog for explanation of symbols
© 2006-2012 IntelliData.net
Statements of suitability for certain applications are based on our knowledge of typical operating conditions for such applications, but
are not intended to constitute - and we specifically disclaim - any warranty concerning suitability for a specific customer application or
use. This Information is intended for use only by customers who have the requisite experience and capability to determine the correct
products for their application. Any technical advice inferred from this Information or otherwise provided by us with reference to the use of
our products is given gratis, and we assume no obligation or liability for the advice given or results obtained.
CCS6.1.3 serial number installation error?
Hello, I downloaded ccs6.1.3 offline from TI and I have a genuine license. After the installation is complete, an error message appears: 'generate free license' has encountered a problem. an literal e...
zhenglei Microcontroller MCU
Is it "reasonable..." to fly a kite made of your own photo?
Original post link: http://mc.dfrobot.com.cn/thread-275083-1-1.html http://mc.dfrobot.com.cn/thread-275083-1-1.html Not long ago, I found a Japanese guy named ARuFa who lives in people's hearts. Out o...
kikiwu DIY/Open Source Hardware
【764 Studio】Newly built section, exciting things are about to begin~~~
Under the leadership of youki12345, this section will bring you some original technologies and designs in the embedded field. We also hope that forum friends will support this section and share and co...
soso Integrated technical exchanges
Why is the application of gallium nitride in RF electronics still so popular?
最近,QORVO又推了一篇氮化镓在射频电子中的应用,在这篇中指出,GaN 非常适合提供毫米波领域所需的高频率和宽带宽。它可以满足性能和小尺寸要求,如下图所示。使用毫米波频段的应用需要高度定向的波束形成技术(波束形成将无线电信号聚焦成强指向性的波束,从而提高功率并最大限度地减少用户设备上的干扰)。这意味着 RF 子系统将需要大量有源元件来驱动相对紧凑的孔径。GaN 非常适合这些应用,因为以小封装尺寸...
alan000345 RF/Wirelessly
How to create multiple sub-projects under one IAR project
I want to learn about CC2530 recently, but I don't know how to use IAR to create several sub-projects under one project. Can you guys take a look and give me some help?...
西伯利亚 Microcontroller MCU
Use of mega48 internal resources - external interrupt 1
[align=left]/*[/align][align=left] *AVRGCC1.c[/align][align=left] *[/align][align=left] *Created: 2016/10/23 17:11:04[/align][align=left] * Author: xuyuntonge[/align][align=left] */ [/align][align=lef...
xutong Microchip MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2818  144  600  195  2613  57  3  13  4  53 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号