DAP222 datasheet, PDF - EEWORLD Datasheet

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DAP222: Descriptionsot-416/SC-90 package common anode dual switching diode surface mount; CategoryDiscrete semiconductor diode; File Size91KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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DAP222 Overview

sot-416/SC-90 package common anode dual switching diode surface mount

DAP222 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Maximum non-repetitive peak forward current	4 A
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.15 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	80 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by DAP222/D

Common Anode Silicon

Dual Switching Diode

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra

high speed switching applications. This device is housed in the SOT–416/SC–90

package which is designed for low power surface mount applications, where board

space is at a premium.

•

Fast trr

•

Low CD

•

Available in 8 mm Tape and Reel

DAP222

SOT–416/SC–90 PACKAGE

COMMON ANODE

DUAL SWITCHING DIODE

SURFACE MOUNT

CASE 463–01, STYLE 4

SOT–416/SC–90

MAXIMUM RATINGS

(TA = 25°C)

Rating

Reverse Voltage

Peak Reverse Voltage

Forward Current

Peak Forward Current

Peak Forward Surge Current

Symbol

VRM

IFM

IFSM(1)

Value

100

300

2.0

Unit

Vdc

mAdc

Adc

CATHODE

ANODE

DEVICE MARKING

DAP222 = P9

THERMAL CHARACTERISTICS

Rating

Power Dissipation

Junction Temperature

Storage Temperature

Symbol

Tstg

Max

150

– 55 ~ + 150

Unit

°C

ELECTRICAL CHARACTERISTICS

(TA = 25°C)

Characteristic

Reverse Voltage Leakage Current

Forward Voltage

Reverse Breakdown Voltage

Diode Capacitance

Reverse Recovery Time

1. t = 1

µS

2. trr Test Circuit on following page.

Symbol

trr(2)

Condition

VR = 70 V

IF = 100 mA

IR = 100

µA

VR = 6.0 V, f = 1.0 MHz

IF = 5.0 mA, VR = 6.0 V, RL = 100

Ω,

Irr = 0.1 IR

Min

—

Max

0.1

1.2

—

3.5

4.0

Unit

µAdc

Vdc

Thermal Clad is a trademark of the Bergquist Company

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

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