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DCX4710H

Description
100ma dual complementary pre-biased transistors
Categorysemiconductor    Discrete semiconductor   
File Size130KB,8 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance  
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DCX4710H Overview

100ma dual complementary pre-biased transistors

Lead-free Green
DCX4710H
100mA DUAL COMPLEMENTARY PRE-BIASED
TRANSISTORS
General Description
NEW PRODUCT
·
DCX4710H is best suited for applications where the load
needs to be turned on and off using micro-controllers,
comparators or other control circuits particularly at a point of
load. It features a discrete pre-based PNP transistor which
can support continuous maximum current of 100 mA. It also
contains a pre-based NPN transistor which can be used as a
control and can be biased using a higher supply. The
component devices can be used as a part of circuit or as
stand alone discrete devices.
4
5
6
3
2
1
Fig. 1: SOT-563
Features
·
·
·
·
·
Built in Biasing Resistors
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
R2
10k
CQ1
6
BQ2
5
EQ2
4
Mechanical Data
·
·
·
·
·
·
·
·
Q1
DDTA114YE_DIE
R1
10k
R2
47k
R1
Q2
10k
Case: SOT-563
Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Fig. 2
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 7
Ordering Information: See Page 7
Weight: 0.005 grams (approximate)
Sub-Component P/N
DDTA114YE_DIE
DDTC114EE_DIE
Reference
Q1
Q2
Device Type
PNP
NPN
1
EQ1
DDTC114EE_DIE
2
BQ1
3
CQ2
Fig. 2: Schematic and Pin Configuration
R1 (NOM)
10KW
10KW
R2 (NOM)
47KW
10KW
Figure
2
2
Maximum Ratings: Total Device
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 45°C
Output Current
@ T
A
= 25°C unless otherwise specified
Symbol
P
d
P
der
I
out
Value
150
1.43
100
Unit
mW
mW/°C
mA
Thermal Characteristics
Characteristic
@ T
A
= 25°C unless otherwise specified
Symbol
T
j
, T
stg
R
qJA
Value
-55 to +150
833
Unit
°C
°C/W
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor)
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
DS30871 Rev. 3 - 2
1 of 8
www.diodes.com
DCX4710H
ã
Diodes Incorporated
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