Photointerrupter(Transmissive)
KIT-1001A
DESCRIPTION
The photointerrupter high-performance standard type
KIT-1001A combines a high-output GaAs IRED with
a high sensitivity phototransistor.
DIMENSIONS
FEATURES
• PWB direct mount type
• GAP : 1.0mm
• Ultra - compact
APPLICATIONS
• Cameras
• Floppy disk drives
• Encoders
ABSOLUTE MAXIMUM RATINGS
Parameter
Forward Current
Input
Pulse Forward Current
Reverse Voltage
Power Dissipation
Collector Emitter Voltage
Output
Emitter Collector Voltage
Collector Current
Collector Power Dissipation
Operating Temperature
Storage Temperature
*2
*3
*2
*1
(Ta=25℃)
Symbol
I
F
I
FP
V
R
P
D
V
CEO
V
ECO
I
C
P
C
T
OPR
T
STG
T
SOL
Rating
50
0.5
5
75
30
5
20
75
-20 ~ +85
-30 ~ +100
260
Unit
mA
A
V
mW
V
V
mA
mW
℃
℃
℃
Soldering Temperature
*1. Pulse width : tw≤100μ
sec.period : T=10msec
*2. No icebound or dew
*3. For MAX. 5 seconds at the position of 1mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
Forward Voltage
Input
Reverse Current
Peak Wavelength
Output
Dark Current
Light Current (Collect Current)
Leakage Current
Collector Emitter Saturation Voltage
Response Time
Rise Time
Fall Time
(Ta=25℃)
Symbol
V
F
I
R
λ
P
I
CEO
I
L1
I
L2
I
CEOD
V
CE(SAT)
tr
tf
I
F
=20mA
V
R
=5V
I
F
=20mA
Conditions
MIN.
-
-
-
-
0.5
0.2
-
-
-
-
TYP.
1.2
-
940
1
-
-
0.5
0.15
10
10
MAX.
1.4
10
-
100
-
-
10
0.4
-
-
Unit
V
μ
A
nm
nA
mA
mA
μ
A
V
µs
µs
V
CE
=10V, 0lx
V
CE
=5V, I
F
=10mA (Non-shading)
V
CE
=5V, I
F
= 5mA (Non-shading)
V
CE
=5V, I
F
=10mA (shading)
I
F
=10mA, I
C
=0.3mA
V
CE
=5V, I
C
=1mA,
R
L
=100Ω
1/2
Coupled
Photointerrupter(Transmissive)
KIT-1001A
Collector power dissipation Vs.
Ambient temparature
Forward current Vs.
Forward voltage
Ta=25℃
(½)
Power
dissipartion( P
C
)
Power
dissipation(P
C
)
(㎃)
(㎃)
Light current Vs.
Forward current
V
CE
=5V
Ta=25℃
Forward current( I
F
)
Forward current(I
F
)
Light Current(I
)
L
)
Light Current( I
100
100
4
3
2
1
0
50
50
0
0
20
40
60
80 (℃)
Ambient temperature(Ta)
Ambient temperature(Ta)
0
0
0.5 1.0 1.5 2.0 (V)
Forward voltage(V
F
F
)
)
Forward voltage( V
L
0
10
20
30
40 (mA)
Forward Current(I
F
F
)
)
Forward Current( I
(㎃)
5
4
3
2
1
0
0
Light current Vs.
Collentor-Emitter voltage
Relative light
current( I
L
)
Relative light
current(I
L
)
Ta=25℃
(%)
Relative light current Vs.
Ambient temperature
V
CE
=5V
I
F
=20㎃
(nA)
Collector
dark current(I
Collector
dark current( I
CEO
)
CEO
)
Dark current Vs.
Ambient temperature
Light Current(I
L
)
Light Current( I )
I
F
=50㎃
I
F
=40㎃
I
F
=30㎃
10
2
V
CE
=10V
L
100
10
1
I
F
=20㎃
50
10
0
I
F
=10㎃
2 4 6 8 10 12 (V)
Collector-Emitter Voltage( V
CE
)
Collector-Emitter Voltage(V
CE
)
0
0
-20 0 20 40 60 (℃)
Ambient temperature( Ta )
Ambient temperature(Ta)
10
-1
0
20 40 60 80 100 (℃)
Ambient
temperature(Ta)
Ambient
temperature( Ta )
Switching time Vs.
Load resistance
Relative light current Vs.
Moving distance
Response time measurement circuit
Response time measurement circuit
(㎲)
Response time
tr, tf
tf
Response time
tr,
V
CE
=5V
I
C
=2㎃
Ta=25℃
(%) X
Relative light
current( I
L
)
L
)
Relative light
current(I
V
CE
=5V
I
F
=20㎃
Ta=25℃
Y
V
CE
=5V
I
F
=20㎃
Ta=25℃
Input
I
C
Input
Output
R
L
V
CC
V
OUT
10
3
100
10
2
tf
90%
10%
td
tr
tf
50
10
1
tr
Optical
Axis(X)
Optical
Axis(X)
)
10
2
10
3
10
4
(Ω
Load Resistance( R
L
)
Road Resistance(R
L
)
0
-2
0 +2
-2 0
Moving distance( L )
Moving distance(L)
+2 (mm)
－
0
＋
2/2
Optical
Axis(Y)
Optical
Axis(Y)
Method of measuring
position
Method of measuring
position
detection
characteristic
detection
characteristic
Microcontroller MCU
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