DF08M datasheet, PDF - EEWORLD Datasheet

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DF08M: Description1A single phase D.I.L. rectifier bridge (1.0A, from 50 to 1000v); CategoryDiscrete semiconductor diode; File Size63KB，4 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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DF08M Overview

1A single phase D.I.L. rectifier bridge (1.0A, from 50 to 1000v)

DF08M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIP
package instruction	R-PDIP-T4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDIP-T4
JESD-609 code	e0
Maximum non-repetitive peak forward current	31 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	0.000005 µA
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Base Number Matches	1

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Bulletin U2788 rev. G 04/03

DF SERIES

1A Single Phase D.I.L. Rectifier Bridge

Features

• Glass passivated chips

• Leads on standard 0.1" grid

• Suitable for automatic insertion

• High surge current capability

• Fully characterised data

• Wide temperature range

• Surface mount option

• Lead free terminals solderable as per

MIL-STD-750 Method 2026

• High temperature soldering guaranteed 260°C/8-10 secs

• Polarity symbols marked on the case

• UL E160375 approved

Description

The DF Series of Single Phase Rectifier Bridges

consists of four silicon junctions encapsulated in a 4

pin D.I.L. package. These devices are intended for

general use in industrial and consumer equipment.

O(av)

= 1.0 A

RRM

range

50 to 1000V

Electrical Specification

DF...

FSM

Maximum DC output

current

Maximum peak one

cycle, non-repetitive

surge current

Maximum I

t capability

for fusing

4.5

4.1

6.4

5.8

√t

Units Conditions

√s

1.0

0.8

amb

= 40

C, Resistive or inductive load

amb

= 40

C, Capacitive load

t = 10ms, 20ms

t = 8.3ms, 16.7ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

Following any rated

load condition and with

rated V

RRM

reapplied

Initial T

= T

max

100% V

RRM

reapplied

Initial T

= T

max

no voltage reapplied

Maximum I

√t

capability for fusing

Maximum peak forward

voltage per diode

Typical peak reverse

leakage per diode

Operating frequency

range

Maximum repetitive peak

reverse voltage range

1.0

100

50 to 1000

t = 0.1 to 10ms, no voltage reapplied

= 1.0A, T

= 25

C, 100% V

RRM

= 150

C, 100% V

RRM

µA

Thermal and Mechanical Specifications

DF...

stg

thJA

Operating and storage

temperature range

Thermal resistance,

junctions to ambient

Approximate weight

0.6 (0.02)

g (oz)

K/W

- 55 to 150

Units

Conditions

www.irf.com

DF08M Related Products

	DF08M
Description	1A single phase D.I.L. rectifier bridge (1.0A, from 50 to 1000v)
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIP
package instruction	R-PDIP-T4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDIP-T4
JESD-609 code	e0
Maximum non-repetitive peak forward current	31 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	0.000005 µA
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Base Number Matches	1

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