Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH16D72AKLB-10,75
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
DESCRIPTION
The MH16D72AKLB is 16777216 - word x 72-bit Double
Data Rate(DDR) Sy nchronous DRAM mounted module.
This consists of 9 industry standard 16M x 8 DDR
Sy nchronous DRAMs in TSOP with SSTL_2 interf ace which
achiev es v ery high speed data rate up to 133MHz.
This socket-ty pe memory m odule is suitable f or main
memory in computer systems and easy to interchange or
add modules.
93pin
1pin
FEATURES
Max.
Frequency
CLK
Access Time
[component level]
Type name
MH16D72AKLB-75
MH16D72AKLB-10
133MHz
100MHz
+ 0.75ns
+ 0.8ns
- Utilizes industry standard 16M X 8 DDR Synchronous DRAMs
in TSOP package , industry standard Registered Buffer in
TSSOP package , and industry standard PLL in TSSOP package.
-
Vdd=Vddq=2.5v ±0.2V
144pin
145pin
52pin
53pin
- Double data rate architecture; two data transf ers per
clock cy c le
- Bidirectional, data strobe (DQS) is transmitted/receiv ed
with data
- Dif f erential clock inputs (CK0 and /CK0)
- data and data mask ref erenced to both edges of DQS
- /CAS latency - 2.0/2.5 (programmable)
- Burst length- 2/4/8 (programmable)
- Auto precharge / All bank precharge controlled by A10
- 4096 ref resh cy c les /64ms
- Auto ref resh and Self ref resh
- Row address A0-11 / Column address A0-9
- SSTL_2 Interf ace
- Module 1bank Conf igration
- Burst Ty pe - sequential/interleav e(programmable)
- Commands entered on each positiv e CLK edge
184pin
92pin
APPLICATION
Main memory unit for PC, PCserver
MIT-DS-0397-1.1
MITSUBISHI ELECTRIC
24.Nov.2000
1
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
,
MH16D72AKLB-10,75
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
PIN CONFIGURATION
PIN
NO.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
PIN
NAME
VREF
DQ0
VSS
DQ1
DQS0
DQ2
VDD
DQ3
NC
RESET
VSS
DQ8
DQ9
DQS1
VDDQ
NC
NC
VSS
DQ10
DQ11
CKE0
VDDQ
DQ16
DQ17
DQS2
VSS
A9
DQ28
A7
VDDQ
DQ19
A5
DQ24
VSS
DQ25
DQS3
A4
VDD
DQ26
DQ27
A2
VSS
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
PIN
NO.
43
44
45
46
47
48
49
50
51
52
KEY
DQ32
VDDQ
DQ33
DQS4
DQ34
VSS
BA0
DQ35
DQ40
VDDQ
/WE
DQ41
/CAS
VSS
DQS5
DQ42
DQ43
VDD
NC
DQ48
DQ49
VSS
NC
NC
VDDQ
DQS6
DQ50
DQ51
VSS
VDDID
DQ56
PIN
NAME
A1
CB0
CB1
VDD
DQS8
A0
CB2
VSS
CB3
BA1
PIN
NO.
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
PIN
NAME
DQ57
VDD
DQS7
DQ58
DQ59
VSS
NC
SDA
SCL
VSS
DQ4
DQ5
VDDQ
DM0
DQ6
DQ7
VSS
NC
NC
A13
VDDQ
DQ12
DQ13
DM1
VDD
DQ14
DQ15
CKE1
VDDQ
NC
DQ20
A12
VSS
DQ21
A11
DM2
VDD
DQ22
A8
DQ23
VSS
A6
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
PIN
NO.
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
KEY
VSS
DQ36
DQ37
VDD
DM4
DQ38
DQ39
VSS
DQ44
/RAS
DQ45
VDDQ
/S0
/S1
DM5
VSS
DQ46
DQ47
NC
VDDQ
DQ52
DQ53
PIN
NAME
DQ28
DQ29
VDDQ
DM3
A3
DQ30
VSS
DQ31
CB4
CB5
VDDQ
CK0
/CK0
VSS
DM8
A10
CB6
VDDQ
CB7
PIN
NO.
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
PIN
NAME
NC
VDD
DM6
DQ54
DQ55
VDDQ
NC
DQ60
DQ61
VSS
DM7
DQ62
DQ63
VDDQ
SA0
SA1
SA2
VDDSPD
NC: Not Connected
MIT-DS-0397-1.1
MITSUBISHI ELECTRIC
24.Nov.2000
2
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH16D72AKLB-10,75
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
Block Diagram
/RS0
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQS8
DM8
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DM
/S
DQS
/S0
BA0-BA1
A0-A11
/RAS
/CAS
CKE0
/WE
PCK
/PCK
/RS0 -> SDRAMs D0-D8
RBA0-RBA1 -> SDRAMs D0-D8
RA0-RA11 -> SDRAMs D0-D8
/RRAS -> SDRAMs D0-D8
/RCAS -> SDRAMs D0-D8
/RCKE0 -> SDRAMs D0-D8
/RWE -> SDRAMs D0-D8
DQS4
DM4
DM
/S
DQS
DQ32
DQ33
DQ34
DQ35
DM
/S
DQS
D0
DQ36
DQ37
DQ38
DQ39
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
D4
DM
/S
DQS
DM
/S
DQS
D1
DQ44
DQ45
DQ46
DQ47
D5
SERIAL PD
DQS6
DM6
DM
/S
DQS
SCL
WP
A0 A1
A2
SDA
DQ48
DQ49
DQ50
DQ51
DM
/S
DQS
SA0 SA1 SA2
VDDQ
D0 to D8
D0 to D8
D0 to D8
D0 to D8
D2
DQ52
DQ53
DQ54
DQ55
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
D6
VDD
VREF
VSS
VDDID
VDDID: OPEN -> VDD = VDDQ
VSS -> VDD = VDDQ
DM
/S
DQS
DM
/S
DQS
CK0
PCK0 -> SDRAMs D0-D8,
Registered Buffer
/PCK0 -> SDRAMs D0-D8,
Registered Buffer
PLL
D3
DQ60
DQ61
DQ62
DQ63
D7
/CK0
D8
/RESET
MIT-DS-0397-1.1
MITSUBISHI ELECTRIC
24.Nov.2000
3
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH16D72AKLB-10,75
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
PIN FUNCTION
SYMBOL
TYPE
DESCRIPTION
Clock: CK0 and /CK0 are dif f erential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK0 and negativ e
edge of /CK0. Output (read) data is ref erenced to the crossings of CK0 and
/CK0 (both directions of c rossing).
Clock Enable: CKE0 controls SDRAM internal clock. When CKE0 is low, the
internal clock f or the f ollowing cy c le is ceased. CKE0 is also used to select
auto / self ref resh. After self ref resh mode is started, CKE0 becomes
asy nchronous input. Self ref resh is maintained as long as CKE0 is low.
Phy s ical Bank Select: When /S0 is high, any command means No Operation.
CK0,/CK0
Input
CKE0
Input
/S0
/RAS, /CAS, /WE
Input
Input
Combination of /RAS, /CAS, /WE defines basic commands.
A0-11 specif y the Row / Column Address in conjunction with BA0,1. The Row
Address is specif ied by A0-11. The Column Address is specif ied by A0-9.
A10 is also used to indicate precharge option. When A10 is high at a read / write
command, an auto precharge is perf ormed. When A10 is high at a precharge
command, all banks are precharged.
Bank Address: BA0,1 specifies one of four banks in SDRAM to which a command is applied. BA0,1
must be set with ACT, PRE, READ, WRITE commands.
A0-11
Input
BA0,1
DQ 0-64
CB 0-7
DQS0-8
DM0-8
Vdd, Vss
VddQ, VssQ
Vddspd
Vref
RESET
SDA
SCL
SA0-2
VDDID
Input
Input / Output
Input / Output
Input
Power Supply
Power Supply
Power Supply
Input
Input
Data Input/Output: Data bus
Data Strobe: Output with read data, input with write data. Edge-aligned with read
data, centered in write data. Used to capture write data.
Masks write data when high, issued concurrently with input data. Both DM and DQ have a write
latency of one clock once the write command is registered into the SDRAM.
Power Supply for the memory array and peripheral circuitry.
VddQ and VssQ are supplied to the Output Buffers only.
Power Supply for SPD
SSTL_2 reference voltage.
This signal is asy nchronous and is driv en low to the register in order to
guarantee the register outputs are low.
This bidirectional pin is used to transf er data into or out of the SPD EEPROM.
A resistor must be connected f rom the SDA bus line to VDD to act as a pullup.
This signal is used to clock data into and out of t he SPD EEPROM. A resistor
may be connected f rom the SCL bus time to VDD to act as a pullup.
These signals are tied at the system planar to either VSS or VDD to conf igure
the serial SPD EEPROM address range.
VDD identif ication f lag
Input / Output
Input
Input
MIT-DS-0397-1.1
MITSUBISHI ELECTRIC
24.Nov.2000
4
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH16D72AKLB-10,75
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
BASIC FUNCTIONS
The MH16D72AKLB provides basic functions, bank (row) activate, burst read / write, bank (row)
precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS
and /WE at CLK rising edge. In addition to 3 signals, /S0 ,CKE0 and A10 are used as chip
select, refresh option, and precharge option, respectively. To know the detailed definition of
commands, please see the command truth table.
/CK0
CK0
/S0
/RAS
/CAS
/WE
CKE0
A10
Chip Select : L=select, H=deselect
Command
Command
Command
Ref resh Option @ref resh command
Precharge Option @precharge or read/write command
def ine basic commands
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data
appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the
burst read (auto-precharge,READA)
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be
written is set by burst length. When A10 =H at this command, the bank is deactivated after
the burst write (auto-precharge,
WRITEA).
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates
burst read /write operation. When A10 =H at this command, all banks are deactivated
(precharge all,
PREA).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE0 =H]
REFA command starts auto-refresh cycle. Refresh address including bank address are
generated internally. After this command, the banks are precharged automatically.
MIT-DS-0397-1.1
24.Nov.2000
MITSUBISHI ELECTRIC
5
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