IXZH10N50LA/B
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOS
TM
MOSFET Process
Optimized for Linear Operation in Common Source Mode
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2Ω
I
S
= 0
V
DSS
I
D25
=
=
500 V
10 A
Maximum Ratings
500
500
±20
±30
10
60
16
TBD
5
>200
250
180
3
0.60
0.85
min.
typ.
max.
V
4.95
6.5
±100
T
J
= 25C
T
J
=125C
150V (operating)
V
V
V
V
A
A
A
mJ
V/ns
V/ns
W
W
W
C/W
C/W
D
S G
G S
= D
A =
B
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
(1)
T
c
= 25°C, Derate 6.0W/°C above 25°C
T
c
= 25°C
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
V
GS
= 0 V, I
D
= 4 ma
V
DS
= V
GS
, I
D
= 250µΑ
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8V
DSS
V
GS
=0
500
3.5
V
nA
µA
mA
Ω
S
Features
•
IXYS RF Low Capacitance Z-MOS
TM
•
•
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Process
Very low insertion inductance (<2nH)
50
1
1.0
3.8
-55
+175
+175
-55
+ 175
300
4
V
GS
= 20 V, I
D
= 0.5I
D25
Pulse test, t
≤
300µS, duty cycle d
≤
2%
V
DS
= 50 V, I
D
= 0.5I
D25
, pulse test
•
High Performance RF Z-MOS
TM
•
Common Source RF Package
A = Gate Source Drain
B = Drain Source Gate
°C
°C
°C
°C
g
1.6mm(0.063 in) from case for 10 s
IXZH10N50LA/B
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
C
iss
C
oss
C
rss
T
d(on)
T
on
T
d(off)
T
off
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 1
Ω
(External)
V
GS
= 0 V, V
DS
= 0.8 V
DSS(MAX)
,
f = 1 MHz
typ.
598
78
8
4
3
4
5
max.
pF
pF
pF
ns
ns
ns
ns
VHF COMMUNICATIONS
Gps
VDD= 50V, Pout=200W, f=175MHz
min.
13
50
typ.
max.
16
60
TBD
db
%
Drain Efficiency
VDD= 50V, Pout=200W, f=175MHz
Load Mismatch
VDD= 150V, Pout=300W, f=175MHz
3T MRI
Gps(1)
VDD=150V, P
OUT
=475W, F=128MHz
min.
12
60
typ.
13
65
max.
db
%
Drain Efficiency
VDD= 50V, Pout=200W, f=175MHz
Zin= 0.59-J0.90
Zout= 5.86+J9.34
(1) - As measured under pulsed conditions (5 ms, 5%) with a gated Bias in
Class AB, at P1dB.
IXZH10N50LA/B
RF Power MOSFET
Capacitance verses Vds
10000
Capacitance in pF
1000
Ciss
100
Coss
10
Crss
1
0
50
100
150
200
250
300
350
400
Vds in Volts
IXZH10N50LA/B
RF Power MOSFET
S-PARMATERS for Ids = 200mA and Vds = 100V
F MHz
2.00
2.56
3.12
3.68
4.24
4.80
5.36
5.92
6.48
7.04
7.60
8.16
8.72
9.28
9.84
10.40
10.96
11.52
12.08
12.64
13.20
13.76
14.32
14.88
15.44
16.00
16.56
17.12
17.68
18.24
18.80
19.36
19.92
20.48
21.04
21.60
22.16
22.72
23.28
23.84
24.40
24.96
25.52
26.08
26.64
27.20
27.76
28.32
28.88
29.44
30.00
mag S11 ang S11
1.00
0.95
0.92
0.90
0.89
0.88
0.88
0.87
0.87
0.87
0.87
0.87
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.91
0.90
0.91
0.91
0.91
-61.49
-74.73
-85.18
-94.18
-101.51
-107.76
-113.39
-118.05
-122.38
-125.89
-129.15
-132.06
-134.68
-136.96
-139.10
-141.24
-142.85
-144.45
-145.98
-147.31
-148.50
-149.72
-150.84
-151.71
-152.76
-152.79
-153.60
-154.31
-155.09
-155.97
-156.64
-157.26
-157.88
-158.51
-159.06
-159.38
-160.04
-160.47
-160.97
-161.44
-161.68
-162.29
-162.56
-162.98
-163.29
-163.81
-164.05
-164.26
-164.63
-164.83
-165.24
mag S12 ang S12
0.01
0.01
0.01
0.02
0.01
0.02
0.01
0.02
0.02
0.01
0.02
0.02
0.02
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
72.80
50.41
36.03
33.42
24.74
23.38
18.24
21.02
20.15
8.21
11.90
5.83
9.67
3.87
11.87
2.91
5.48
3.66
-0.44
-1.43
4.33
7.20
3.37
6.52
6.34
4.79
-2.91
4.60
3.83
-3.23
2.53
-7.10
2.86
-2.49
0.66
1.39
-0.33
0.37
-1.11
-4.88
-1.29
-0.45
-2.68
-5.35
-4.70
-3.38
-7.12
-1.90
-1.98
-2.49
-3.00
mag S21 ang S21
64.02
54.88
46.48
39.80
34.43
30.24
26.95
24.14
21.89
20.03
18.44
17.06
15.88
14.88
13.96
13.13
12.44
11.77
11.15
10.63
10.16
9.71
9.29
8.94
8.58
8.57
8.26
7.96
7.68
7.43
7.19
6.95
6.74
6.55
6.36
6.17
6.01
5.85
5.70
5.55
5.41
5.28
5.16
5.04
4.92
4.82
4.71
4.59
4.51
4.42
4.31
152.19
136.18
125.23
117.56
111.83
107.62
104.21
101.58
99.12
97.24
95.40
93.95
92.60
91.37
90.58
89.43
88.35
87.69
86.75
85.86
85.17
84.54
83.87
83.32
82.74
82.70
82.15
81.57
81.02
80.50
79.91
79.33
78.75
78.27
77.80
77.35
76.69
76.38
75.91
75.27
74.80
74.39
73.82
73.46
72.84
72.28
71.75
71.36
70.81
70.42
69.85
mag S22 ang S22
0.88
0.78
0.70
0.64
0.59
0.56
0.53
0.50
0.48
0.47
0.46
0.45
0.45
0.44
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.44
0.44
0.44
0.44
0.44
0.45
0.45
0.46
0.46
0.46
0.47
0.47
0.48
0.48
0.48
0.49
0.49
0.50
0.50
0.51
0.51
0.52
0.52
0.52
0.53
0.53
0.54
0.54
-51.42
-61.85
-69.85
-76.52
-81.83
-86.25
-90.12
-93.86
-96.91
-99.89
-102.23
-104.53
-106.30
-107.93
-109.34
-110.69
-112.27
-113.80
-114.55
-115.60
-116.56
-117.37
-118.56
-118.83
-119.56
-119.64
-120.22
-120.79
-121.37
-121.90
-122.45
-123.00
-123.39
-123.87
-124.24
-124.84
-125.20
-125.64
-126.10
-126.27
-126.56
-127.29
-127.36
-127.78
-128.36
-128.52
-128.88
-129.17
-129.54
-129.83
-130.17
Note: S-Parameter
data is based on test-
ing of IXZ210N50L
IXZH10N50LA/B
RF Power MOSFET
S-PARMATERS for Ids = 500mA and Vds = 85V
F MHz
2.00
2.56
3.12
3.68
4.24
4.80
5.36
5.92
6.48
7.04
7.60
8.16
8.72
9.28
9.84
10.40
10.96
11.52
12.08
12.64
13.20
13.76
14.32
14.88
15.44
16.00
16.56
17.12
17.68
18.24
18.80
19.36
19.92
20.48
21.04
21.60
22.16
22.72
23.28
23.84
24.40
24.96
25.52
26.08
26.64
27.20
27.76
28.32
28.88
29.44
30.00
mag S11 ang S11
1.00
0.92
0.89
0.87
0.87
0.87
0.87
0.87
0.88
0.88
0.89
0.89
0.90
0.90
0.91
0.91
0.91
0.91
0.92
0.92
0.92
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.95
0.94
0.95
0.95
0.95
0.95
0.95
0.95
0.95
-75.60
-88.14
-97.38
-105.23
-111.43
-116.93
-121.73
-125.77
-129.43
-132.51
-135.38
-137.91
-140.21
-142.15
-144.08
-145.79
-147.24
-148.71
-150.00
-151.28
-152.29
-153.33
-154.29
-155.22
-156.05
-156.02
-156.80
-157.45
-158.24
-159.00
-159.52
-160.13
-160.64
-161.22
-161.70
-162.01
-162.64
-163.02
-163.36
-163.92
-164.13
-164.61
-164.83
-165.25
-165.49
-165.87
-166.18
-166.42
-166.71
-166.89
-167.21
mag S12 ang S12
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
51.67
41.71
26.40
20.78
17.69
13.57
11.35
14.74
18.53
5.00
11.59
4.28
2.67
-0.50
7.28
3.08
4.92
4.59
0.05
-3.47
3.75
6.98
-1.36
7.91
6.46
4.31
3.45
3.31
7.43
-0.33
8.91
-5.90
6.68
6.33
13.23
10.44
4.32
6.04
8.23
4.67
3.79
7.04
4.29
1.02
1.65
4.26
4.00
11.55
9.83
5.47
2.61
mag S21 ang S21
98.32
76.78
61.88
51.39
43.57
37.75
33.33
29.65
26.68
24.33
22.32
20.59
19.14
17.89
16.77
15.74
14.91
14.13
13.37
12.74
12.20
11.65
11.15
10.75
10.32
10.32
9.95
9.60
9.26
8.98
8.71
8.41
8.18
7.96
7.74
7.51
7.33
7.14
6.97
6.80
6.62
6.48
6.34
6.20
6.06
5.95
5.82
5.68
5.58
5.47
5.35
135.58
120.80
111.89
105.98
101.80
98.72
96.32
94.63
92.99
91.67
90.53
89.62
88.81
87.97
87.74
86.98
86.27
85.96
85.37
84.86
84.42
84.06
83.58
83.43
83.03
83.01
82.75
82.30
81.97
81.69
81.27
80.91
80.48
80.17
79.82
79.49
79.06
78.83
78.51
77.96
77.61
77.41
76.89
76.63
76.12
75.63
75.23
74.90
74.44
74.11
73.63
mag S22 ang S22
0.83
0.73
0.65
0.61
0.57
0.55
0.53
0.52
0.51
0.51
0.50
0.50
0.50
0.49
0.49
0.49
0.49
0.49
0.49
0.49
0.49
0.49
0.49
0.49
0.50
0.50
0.50
0.50
0.50
0.50
0.51
0.51
0.51
0.51
0.51
0.52
0.52
0.52
0.52
0.53
0.53
0.53
0.53
0.53
0.54
0.54
0.54
0.55
0.55
0.55
0.55
-77.19
-90.21
-99.74
-107.26
-113.20
-118.05
-121.94
-125.82
-128.85
-131.50
-133.72
-135.79
-137.30
-138.59
-139.86
-140.96
-142.13
-143.40
-143.90
-144.57
-145.23
-145.74
-146.57
-146.58
-147.08
-147.08
-147.29
-147.77
-148.05
-148.23
-148.60
-148.70
-148.83
-149.05
-149.25
-149.55
-149.56
-149.69
-149.75
-149.91
-149.91
-150.19
-150.00
-150.21
-150.41
-150.40
-150.46
-150.43
-150.48
-150.57
-150.69
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