IXZ4DF12N100
RF Power MOSFET & DRIVER
Driver / MOSFET Combination
DEIC-515 Driver combined with a DE375-102N12A MOSFET
Gate driver matched to MOSFET
Features
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power cycling capability
•
IXYS advanced Z-MOS process
•
Low R
DS(on)
•
Very low insertion inductance (<2nH)
•
No beryllium oxide (BeO) or other hazardous materials
•
Built using the advantages and compatibility of CMOS and IXYS
HDMOS™ processes
•
Latch-Up Protected
•
Low Quiescent Supply Current
Advantages
•
Optimized for RF and high speed
•
Easy to mount—no insulators needed
•
High power density
•
Single package reduces size and heat sink area
1000 Volts
12 A
0.7 Ohms
Applications
• Class D or E Switching
Amplifier
• Multi MHz Switch Mode
Power Supplies (SMPS)
Description
The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically
designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications. The IXZ4DF12N100 in
pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and
minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating
range. Designed with small internal delays, the IXZ4DF12N100 is suitable for higher power operation where
combiners are used. Its features and wide safety margin in operating voltage and power make the
IXZ4DF12N100 unmatched in performance and value.
The IXZ4DF12N100 is packaged in DEIs low inductance RF package incorporating DEI's RF layout techniques
to minimize stray lead inductances for optimum switching performance. The IXZ4DF12N100 is a surface-
mountable device.
Figure 1.
Functional Diagram
IXZ4DF12N100
RF Power MOSFET & DRIVER
Device Specifications
Parameter
Maximum Junction Temperature
Operating Temperature Range
Weight
Value
150°C
- 40°C to 85°C
5.5g
Test Conditions
I
D
= 0.5I
DM25
Maximum
Ratings
40MHz
1000V
20V
50uA
1mA
12A
72A
12A
TBD 500W
0.25 °C/W
TBD °C/W
Test Condition
V
CC
= 15V, I
D
= 0.5I
DM25
Pulse Test, t ≤ 300 S,
Duty Cycle ≤ 2%
Symbol
f
MAX
V
DSS
V
CC
,
V
CCIN
I
DSS
I
DM25
I
DM
I
AR
P
T
(MOSFET and Driver)
R
thJC
R
thJHS
Device Performance
Symbol
R
ds(ON)
V
CC
,
V
CCIN
IN
(Signal Input)
V
IH (High Input Voltage)
V
IL (Low Input Voltage)
Z
IN
C
stray
C
OSS
t
ONDLY
t
OFFDLY
t
R
t
F
V
DS
= 0.8V
DSS
V
GS
= 0V
T
J
= 25C
T
J
= 125C
T
C
=
25°C
T
C
= 25°C, Pulse limited by T
JM
T
C
= 25°C
T
C
=
25°C
Minimum
Typical
0.7
Maximum
8V
- 5V
V
CCIN
-2V
15V
20V
V
CCIN
+0.3V
V
CCIN
+0.3V
0.8V
f = 1MHz
f = 1MHz Any one pin to the
back plane metal
V
GS
= 0V,
V
DS
= 0.8V
DSS(max)
,
f =1MHz
T
C
= 25°C
V
CC
, V
CCIN
, V
IN
= 15V 1 S Pulse,
V
DS
= 50V, R
L
= 2.5
7960
46pf
150pf
20nS
22.6nS
3nS
4.5nS
T
C
= 25°C
V
CC
, V
CCIN
, V
IN
= 15V 1 S Pulse,
V
DS
= 50V, R
L
= 2.5
IXZ4DF12N100
RF Power MOSFET & DRIVER
Fig. 2
Fig. 3
Extended Output Characteristics @ 25°C
2.5
R
DS(ON)
vs. Temperature
I
D
= 0.5I
DM
50
R
DS(ON)
(Ohms)
40
I
D
(A)
30
20
10
0
0
V
GS
= V
CC
= 15V and 20V
2
1.5
1
0.5
0
V
GS
= V
CC
= 8V
50
V
DS
(V)
100
150
20
70
120
170
Temperature (C)
Fig. 4
25
23
21
19
17
15
Propagation Delay ON vs . Supply Voltage
I
D
= 0.5I
DM
Fig. 5
Propagation Delay OFF vs. Supply Voltage
28.5
Time (nS)
Time (nS)
28
27.5
5
10
15
V
CC
/ V
CCIN
/ IN (V)
20
25
5
10
15
V
CC
/ V
CCIN
/ IN (V)
20
25
Fig. 6
Propagation Delay ON vs.Temperature
I
D
= 0.5 I
DM
, V
CC
/ V
CCIN
/ IN = 15V
19
18.5
Fig. 7
Propagation Delay OFF vs. Temperature
I
D
= 0.5 I
DM
, V
CC
/ V
CCIN
/ IN = 15V
33
32
31
Time (nS)
Time (nS)
18
17.5
17
16.5
16
20
70
120
170
30
29
28
27
26
25
20
70
120
170
Temperature (°C)
Temperature °C
IXZ4DF12N100
RF Power MOSFET & DRIVER
Fig. 8
4.5
4
Rise Time vs. Supply Voltage
I
D
= 0.5 I
DM
Fig. 9
8
7
Fall Time vs. Supply Voltage
I
D
= 0.5 I
DM
Time (nS)
Time (nS)
3.5
3
2.5
2
1.5
5
10
15
20
25
6
5
4
3
2
5
10
15
20
25
V
CC
/ V
CCIN
/ IN (V)
V
CC
/ V
CCIN
/ IN (V)
Fig. 10
Rise Time vs. Temperature
I
D
= 0.5 I
DM
, V
CC
/ V
CCIN
/ IN = 15V
Fig. 11
3
Fall Time vs. Temperature
I
D
= 0.5 I
DM
, V
CC
/ V
CCIN
/ IN = 15V
2.5
2.4
2.5
Time (nS)
2.3
2.2
2.1
2
20
70
120
170
Time (nS)
2
1.5
1
20
70
120
170
Temperature (°C)
Temperature (°C)
Fig. 12
10,000
Output Capacitance vs. V
DS
Voltage
Fig. 13
10
V
CC
Supply Current vs. Frequency
Driver Section
20V
15V
8
V
C a p a c ita n c e (p F )
1,000
V
CC
Current (A)
0
100
200
300
400
500
600
700
800
900
1000
1
100
0.1
10
0.01
0
10
20
30
40
50
V
DS
(V)
Frequency (MHz)
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