IXZ4DF18N50
RF Power MOSFET & DRIVER
Driver / MOSFET Combination
DEIC-515 Driver combined with IXZ318N50 MOSFET
Gate driver matched to MOSFET
Features
•
Isolated substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power cycling capability
•
IXYS advanced Z-MOS process
•
Low R
ds(ON)
•
Very low insertion inductance(<2nH)
•
No beryllium oxide (BeO) or other hazardous materials
•
Built using the advantages and compatibility of CMOS and IXYS
HDMOS™ processes
•
Latch-up protected
•
Low quiescent supply current
Applications
Advantages
•
Optimized for RF and high speed
•
Easy to mount—no insulators needed
•
High power density
•
Single package reduces size and heat sink area
• Class D or E Switching
Amplifier
• Multi MHz Switch Mode
Power Supplies (SMPS)
500 Volts
19 A
0.29 Ohms
Description
The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination
specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The
IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of less
than 4ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire
operating range. Designed with small internal delays, the IXZ4DF18N50 is suitable for higher power operation
where combiners are used. Its features and wide safety margin in operating voltage and power make the
IXZ4DF18N50 unmatched in performance and value.
The IXZ4DF18N50 is packaged in DEI's low inductance RF package incorporating DEI's RF layout techniques
to minimize stray lead inductances for optimum switching performance. The IXZ4DF18N50 is a surface-
mountable device.
Figure 1.
Functional Diagram
IXZ4DF18N50
RF Power MOSFET & DRIVER
Device Specifications
Parameter
Maximum Junction Temperature
Operating Temperature Range
Weight
Value
150°C
- 40°C to 85°C
5.5g
Test Conditions
I
D
= 0.5I
DM25
Maximum
Ratings
40MHz
500V
20V
50uA
1mA
19A
95A
19A
500 W
0.25 °C/W
TBD °C/W
Test Condition
Minimum
Typical
0.29
8V
- 5V
V
CCIN
-2V
Symbol
f
MAX
V
DSS
V
CC
,
V
CCIN
I
DSS
I
DM25
I
DM
I
AR
P
T
(MOSFET and Driver)
R
thJC
R
thJHS
Device Performance
V
DS
= 0.8V
DSS
V
GS
= 0V
T
J
= 25C
T
J
= 125C
T
C
=
25°C
T
C
= 25°C, Pulse limited by T
JM
T
C
= 25°C
T
C
=
25°C
Symbol
R
ds(ON)
V
CC
,
V
CCIN
IN
(Signal Input)
V
IH (High Input Voltage)
V
IL (Low Input Voltage)
Z
IN
C
stray
C
OSS
t
ONDLY
t
OFFDLY
t
R
t
F
Maximum
V
CC
= 15 V, I
D
= 0.5I
DM25
Pulse Test, t ≤ 300 S, Duty Cycle ≤ 2%
15V
20V
V
CCIN
+0.3V
V
CCIN
+0.3V
0.8V
f = 1MHz
f = 1MHz Any one pin to the back plane
metal
7960
46pf
139pf
17 nS
26 nS
3 nS
3 nS
V
GS
= 0V, V
DS
= 0.8V
DSS
(max) ,
f =1MHz
T
C
= 25°C
V
CC
, V
CCIN
, V
IN
= 15V, 1 S Pulse,
V
DS
= 50V, R
L
= 5.0
T
C
= 25°C
V
CC
, V
CCIN
, V
IN
= 15V,1 S Pulse,
V
DS
= 50V, R
L
= 5.0
IXZ4DF18N50
RF Power MOSFET & DRIVER
Fig. 2
Fig. 3
R
DS(ON)
vs. Temperature
I
D
= 0.5 I
DM
0.7
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0.2
20
70
120
170
Extended Output Characteristics @ 25°C
90
80
70
60
50
40
30
20
10
0
0
25
50
V
DS
(V)
75
100
125
I
D
(A)
V
GS
= 20V
V
GS
= 15V
V
GS
= 8V
R
DS(ON)
Temperature °C
Fig. 4
Propagation Delay ON vs. Supply Voltage
I
D
= 0.5 I
DM
24
23
Fig. 5
Propagation Delay OFF vs. Supply Voltage
I
D
= 0.5 I
DM
26.5
Time (nS)
20
19
18
17
16
15
5
10
15
20
25
Time (nS)
22
21
26
25.5
5
10
15
20
25
V
CC
/ V
CCIN
/ IN (V)
Fig. 6
18.5
18
V
CC
/ V
CCIN
/ IN (V)
Propagation Delay OFF vs. Temperature
I
D
= 0.5 I
DM
, V
CC
/ V
CCIN
/ IN =15V
Propagation Delay ON vs. Temperature
I
D
= 0.5 I
DM
, V
CC
/ V
CCIN
/ IN = 15V
Fig. 7
30
29
Time (nS)
Time (nS)
17.5
17
16.5
16
20
70
120
170
28
27
26
25
20
70
120
170
Temperature °C
Temperature °C
IXZ4DF18N50
RF Power MOSFET & DRIVER
Fig. 8
Rise Time vs. Supply Voltage
I
D
= 0.5 I
DM
4
Fig. 9
12
10
Fall Time vs. Supply Voltage
I
D
= 0.5 I
DM
3.5
Time (nS)
Time (nS)
8
6
4
2
3
2.5
0
2
5
10
15
20
25
5
10
15
20
25
V
CC
/ V
CCIN
/ IN (V)
Fig. 10
3
V
CC
/ V
CCIN
/ IN (V)
Fig. 11
3
Rise Time vs. Temperature
I
D
= 0.5 I
DM
, V
CC
/ V
CCIN
/ IN = 15V
Fall Time vs. Temperature
I
D
= 0.5 I
DM
, V
CC
/ V
CCIN
/ IN = 15V
2.5
Time (nS)
2
Time (nS)
20
70
120
170
2.5
2
1.5
1
1.5
20
70
120
170
Temperature °C
Temperature °C
Fig. 12
O u tp u t C a p a c ita n c e vs . V
D S
Vo lta g e
Fig. 13
10
V
CC
Supply Current vs. Frequency
Driver Section
20V
15V
8V
10000
Capacitance (pF)
1000
V
CC
Current (A)
100
C
O SS
1
10
0.1
1
0
100
200
300
400
500
0.01
0
10
20
30
40
50
V
D S
(V)
Frequency (MHz)
MCU
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