IXZ318N50
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOS
TM
MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2Ω
I
S
= 0
V
DSS
I
D25
R
DS(on)
P
DC
V
V
V
V
A
A
A
mJ
V/ns
V/ns
W
W
W
C/W
C/W
SG1
SG2
GATE
=
=
≤
=
500 V
19 A
0.34
Ω
880 W
Maximum Ratings
500
500
±20
±30
19
95
19
TBD
5
>200
880
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol
Test Conditions
T
c
= 25°C
T
amb
= 25°C
DRAIN
440
3.0
0.17
0.34
SD1
SD2
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
typ.
max.
V
4.9
6.5
±100
T
J
= 25C
T
J
=125C
Features
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
V
GS
= 0 V, I
D
= 4 ma
V
DS
= V
GS
, I
D
= 250µΑ
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8V
DSS
V
GS
=0
500
3.5
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
•
•
Low gate charge and capacitances
−
easier to drive
−
faster switching
•
Low R
DS(on)
•
Very low insertion inductance (<2nH)
•
No beryllium oxide (BeO) or other
hazardous materials
Advantages
cycling capability
IXYS advanced Z-MOS process
V
nA
µA
mA
Ω
S
°C
°C
50
1
.32
5.0
-55
175
-55
+ 175
300
3.5
5.4
.34
6.0
+175
V
GS
= 20 V, I
D
= 0.5I
D25
Pulse test, t
≤
300µS, duty cycle d
≤
2%
V
DS
= 50 V, I
D
= 0.5I
D25
, pulse test
°C
°C
g
•
Optimized for RF and high speed
•
Easy to mount—no insulators needed
•
High power density
1.6mm(0.063 in) from case for 10 s
IXZ318N50
Z-MOS RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
R
G
C
iss
C
oss
C
rss
C
stray
T
d(on)
T
on
T
d(off)
T
off
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
T
rr
Test Conditions
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
I
F
=
I
s,
V
GS
=0 V, Pulse test, t ≤ 300 s, duty cycle
≤2%
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 1
Ω
(External)
Back Metal to any Pin
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
typ.
max.
1
Ω
pF
pF
pF
pF
ns
ns
ns
ns
1950
175
17
33
4
4
5
6
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
typ.
max.
19
114
1.5
200
A
A
V
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device
Installation & Mounting Instructions”
technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,860,072
5,049,961
5,640,045
4,881,106
5,063,307
4,891,686
5,187,117
4,931,844
5,237,481
5,017,508
5,486,715
IXZ318N50
Z-MOS RF Power MOSFET
Fig. 1
Typical Transfer Characteristics
V
DS
= 50V, P.W. = 20 S
70
60
35
9V - 15V
8.5V
Fig. 2
Typical Output Characteristics
30
I
D
, Drain Current (A)
I
D
, Drain Currnet (A)
50
40
30
20
10
0
5
6
7
8
9
10
11
12
13
14
15
25
20
15
7.5V
8V
10
5
0
0
25
50
75
100
125
7V
6.5V
V
GS
, Gate-to Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 3
16
Gate Charge vs. Gate-to-Source Voltage
V
DS
= 250V, I
D
= 9.5A, I
G
= 3m A
Fig. 4
Extended Typical Output Characteristics
100
Top
12V - 15V
10V
9V
8.5V
8V
7.5V
7V
6.5V
Gate-to-Source Voltage (V)
14
10
8
6
4
2
0
0
20
40
60
80
I
D
, Drain Currnet (A)
12
80
60
40
Bottom
20
0
0
20
40
60
80
100
120
Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 5
V
DS
vs. Capacitance
10000
C
iss
Capacitance (pF)
1000
C
oss
100
Crss
10
1
0
50
100
150
200
250
300
350
400
V
DS
Voltage (V)
IXZ318N50
Z-MOS RF Power MOSFET
Fig. 6 Package Drawing
Source
Source
Gate
Drain
Source
Source
Doc #dsIXZ318N50 REV 07/09
© 2009 IXYS RF
An
IXYS
Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
京公网安备 11010802033920号
EEWORLD
