IXZR18N50 & IXZR18N50A/B
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOS
TM
MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2Ω
I
S
= 0
V
DSS
I
D25
R
DS(on)
P
DC
V
V
V
V
S
D D
G
= G SS G
50 A = D
50 B =
50
=
=
≤
=
500 V
19 A
0.37
Ω
350 W
Maximum Ratings
500
500
±20
±30
19
95
19
TBD
5
>200
350
A
A
A
mJ
V/ns
V/ns
W
W
W
C/W
C/W
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol
Test Conditions
Characteristic Values
min.
500
4.6
±100
T
J
= 25C
T
J
T
c
= 25°C, Derate 4.4W/°C above 25°C
T
c
= 25°C
TBD
3.0
TBD
TBD
Features
(
T
J
= 25°C unless otherwise specified
)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
1.6mm(0.063 in) from case for 10
s
V
GS
= 0 V, I
D
= 4 ma
V
DS
= V
GS
, I
D
= 250µΑ
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8V
DSS
V
GS
=0
=125C
typ.
max.
V
V
nA
µA
mA
Ω
S
+175
°C
°C
+ 175
°C
°C
g
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
•
•
Low gate charge and capacitances
−
easier to drive
−
faster switching
•
Low R
DS(on)
•
Very low insertion inductance (<2nH)
•
No beryllium oxide (BeO) or other
hazardous materials
Advantages
cycling capability
IXYS advanced Z-MOS process
50
1
0.37
6.7
-55
175
-55
300
3.5
V
GS
= 20 V, I
D
= 0.5I
D25
Pulse test, t
≤
300µS, duty cycle d
≤
2%
V
DS
= 50 V, I
D
= 0.5I
D25
, pulse
test
•
Optimized for RF and high speed
•
Easy to mount—no insulators needed
•
High power density
IXZR18N50 & IXZR18N50A/B
Z-MOS RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
R
G
C
iss
C
oss
C
rss
C
stray
T
d(on)
T
on
T
d(off)
T
off
Q
g(on)
Q
gs
Q
gd
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
T
rr
Test Conditions
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
I
F
=
I
s,
V
GS
=0 V, Pulse test, t ≤ 300 s, duty cycle
≤2%
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
I
G
= 3mA
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 1
Ω
(External)
Back Metal to any Pin
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
typ.
max.
1
Ω
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
2020
172
21
33
4
4
4
5
42
14
21
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
typ.
max.
19
114
1.5
200
Α
A
V
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,640,045
6,404,065
6,583,505
6,710,463
6,731,002
5,017,508
5,486,715
6,727,585
IXZR18N50 & IXZR18N50A/B
Z-MOS RF Power MOSFET
Fig. 1
Gate Charge vs. Gate-to-Source Voltage
V
DS
= 250V, I
D
= 9.5A, I
G
= 3m A
16
Fig. 2
Typical Output Characteristics
30
8V - 15V
Gate-to-Source Voltage (V)
14
12
10
8
6
4
2
0
0
20
40
60
80
I
D
, Drain Currnet (A)
25
20
15
7V
7.5V
10
5
0
0
20
40
60
80
100
120
6.5V
6V
Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
V
DS
= 50V
60
Fig. 4
Extended Typical Output Characteristics
Top
50
80
I
D
, Drain Current (A)
40
30
20
10
0
5
6
7
8
9
10
11
12
13
14
15
I
D
, Drain Currnet (A)
60
Bottom
12V - 15V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
40
20
0
0
20
40
60
80
100
120
V
GS
, Gate-to Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 5
V
DS
vs. Capacitance
10000
C
iss
Capacitance (pF)
1000
C
oss
100
C
rss
10
1
0
50
100
150
200
250
300
350
400
V
DS
Voltage (V)
IXZR18N50 & IXZR18N50A/B
Z-MOS RF Power MOSFET
Fig. 6 Package Drawing
1
2
3
50: 1=G, 2=D, 3=S
50A: 1=G, 2=S, 3= D
50B: 1=D, 2=S, 3=G
Doc #dsIXZR18N50_A/B REV 08/09
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An
IXYS
Company
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