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2509NZ

Description
common drain N-channel 2.5V specified powertrench mosfet
File Size102KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet View All

2509NZ Overview

common drain N-channel 2.5V specified powertrench mosfet

FDW2509NZ
January 2005
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V – 12V).
Features
7.1 A, 20 V. R
DS(ON)
= 20 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 26 mΩ @ V
GS
= 2.5 V
Extended V
GSS
range (±12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
Applications
Li-Ion Battery Pack
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
±12
(Note 1a)
Units
V
A
W
°C
7.1
30
1.6
1.1
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
77
114
°C/W
Package Marking and Ordering Information
Device Marking
2509NZ
©2005
Fairchild Semiconductor Corporation
Device
FDW2509NZ
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
FDW2509NZ Rev C(W)
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