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DCF010

Description
ultrahigh-speed switching diode
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

DCF010 Overview

ultrahigh-speed switching diode

DCF010 Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresULTRA HIGH SPEED SWITCHING
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Ordering number:EN2789B
DCF010
Silicon Epitaxial Planar Type (Anode Common)
Ultrahigh-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small-sized package.
· Fast switching speed.
· Small interterminal capacitance.
Package Dimensions
unit:mm
1186A
[DCF010]
1:Cathode1
2:Cathode2
3:Anode1, Anode2
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Current (1µs)
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Unit rating
Total rating
Unit rationg
Total tating
Unit rating
total rating
Conditions
SANYO:MCP
Ratings
85
80
300
450
100
150
4
6
100
125
–55 to +125
Unit
V
V
mA
mA
mA
mA
A
A
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Forward Voltage
Symbol
VF1
VF2
VF3
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
IR1
IR2
C
trr
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50
, Irr=0.1Irp
Conditions
Ratings
min
typ
0.61
0.74
1.20
0.1
0.5
4.0
4.0
max
Unit
V
V
V
µA
µA
pF
ns
Reverse Recovery Time Test Circuit
Electrical Connection
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)92995GI(KOTO)/5108TA, TS No.2789-1/2

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