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DA121TT1/D

Description
silicon switching diode
File Size125KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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DA121TT1/D Overview

silicon switching diode

DA121TT1
Advance Information
Silicon Switching Diode
http://onsemi.com
MAXIMUM RATINGS
(TA = 25°C)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
m
s
Symbol
VR
IF
IFM(surge)
Max
80
200
500
Unit
V
mA
mA
3
CATHODE
1
ANODE
Preferred Device
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR–4 Board (1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction to Ambient (1)
Total Device Dissipation,
FR–4 Board (2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction to Ambient (2)
Junction and Storage
Temperature Range
(1) FR–4 @ Minimum Pad
(2) FR–4 @ 1.0
×
1.0 Inch Pad
Symbol
PD
225
1.8
R
θJA
PD
360
2.9
R
θJA
TJ, Tstg
345
–55 to
+150
mW
555
mW
mW/°C
°C/W
Max
Unit
3
2
1
CASE 463
SOT–416/SC–75
STYLE 2
DEVICE MARKING
mW/°C
°C/W
6A
°C
ORDERING INFORMATION
Device
DA121TT1
Package
SOT–416
Shipping
3000 / Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
©
Semiconductor Components Industries, LLC, 2000
1
May, 2000 – Rev. 1
Publication Order Number:
DA121TT1/D

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