DGS 20-018A(S)
DGSK 40-018A
Gallium Arsenide Schottky Rectifier
I
FAV
= 23 A
V
RRM
= 180 V
C
Junction
= 33 pF
Type
Marking on product
Circuit
Package
A = Anode, C = Cathode , TAB = Cathode
DGS 20-018A
DGS 20-018A
Single
A
C
TO-220 AC
C
A
C (TAB)
C (TAB)
DGS 20-018AS
DGS 20-018AS
Single
A
C
TO-263 AB
A
A
DGSK 40-018A
DGSK 40-018A
Common cathode
A
C
A
TO-220 AB
A
C
A
C (TAB)
Symbol
V
RRM/RSM
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
M
d
Conditions
Maximum Ratings
180
V
A
A
A
°C
°C
W
Nm
Features
• Low forward voltage
• Very high switching speed
• Low junction capacity of GaAs
- low reverse current peak at turn off
• Soft turn off
• Temperature independent switching
behaviour
• High temperature operation capability
• Epoxy meets UL 94V-0
Applications
• MHz switched mode power supplies
(SMPs)
• Small size SMPs
• High frequency converters
• Resonant converters
T
C
= 25°C; DC
T
C
= 90°C; DC
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
23
17
30
-55...+175
-55...+150
T
C
= 25°C
mounting torque
(Versions A only)
48
0.4...0.6
Symbol
I
R
V
F
C
J
R
thJC
R
thCH
Weight
Conditions
V
R
= V
RRM
;
V
R
= V
RRM
;
I
F
= 7.5 A;
I
F
= 7.5 A;
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
2.0
2.0
0.8
0.8
33
3.1
1.0
mA
mA
V
V
pF
K/W
K/W
g
V
R
= 100 V; T
VJ
= 125°C
TO-220
0.5
2
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1-2
0452
DGS 20-018A(S)
DGSK 40-018A
30
10
A
I
F
1
T
VJ
=
125°C
25°C
400
pF
C
J
100
Outline TO-220
(center pin for DGSK types only)
0.1
T
VJ
= 125°C
0.01
0.0
0.5
1.0
1.5
V
F
V 2.0
10
0.1
1
10
100 V 1000
V
R
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.38
0.56
2.29
2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
Single Pulse
1
Z
thJC
0.1
0.01
DGS10-015/018BS
Outline
TO-263 AB
0.00001
0.0001
0.001
0.01
0.1
1
t
s
10
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
V
F
(I
F
)
extraction of excess carriers
causes temperature dependant
reverse recovery (t
rr
, I
RM
, Q
rr
)
delayed saturation leads to V
FR
GaAs Schottky Diode
by majority carriers only
V
F
(I
F
), see Fig. 1
reverse current charges
junction capacity C
J
, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
8.00
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.89
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.315
.190
.110
.039
.055
.029
.055
.380
.350
9.65
10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
0.46
15.88
2.79
1.40
1.78
0.20
0.74
.380
.405
.245
.320
.100 BSC
.575
.090
.040
.050
0
.018
.625
.110
.055
.070
.008
.029
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
2-2
0452
Embedded System
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