Indium Arsenide Detectors
ISO 9001 Certified
Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
France: LASER COMPONENTS S.A.S., Phone: +33 1 3959 5225, Fax: +33 1 3959 5350, info@lasercomponents.fr
J12
Indium Arsenide Detector Operating Notes (1.0 to 3.8 µm)
General
J12 Series detectors are high-quality
Indium Arsenide photodiodes for use in the
1 to 3.8 µm wavelength range.
The equivalent circuit is a photon-
generated current source I
ph
with parallel
capacitance C
D
, shunt resistance R
D
, and
series resistance R
S
(Fig. 12-1).
The output signal current I
S
is defined
as:
I
S
= I
ph
R
D
R
D
+ R
S
+ R
LOAD
R
D
varies as a function of detector
temperature (Fig. 12-2). R
S
depends on the
position of the source light spot on the
detector surface; it varies with the distance
from the spot to the detector contact ring .
When R
S
is small compared to R
D
it may
be disregarded, but with room temperature
InAs the effects of R
S
are significant.
Figure 12-1
InAs Photodiode Equivalent Circuit
R
bias
Responsivity
The effect of R
S
on the apparent
response of an InAs detector is illustrated
below.
At 22°C, R
S
and R
D
may have the same
order of magnitude (~10Ω). As a result,
although incident photons generate
carriers uniformly over the detector area,
some of the carriers generated near the
center of the area may be "shunted away"
through R
D
and fail to reach the contact
ring. This results in a "dip" in response at
the center of the detector's active area
(Fig. 12-3).
The effect is less pronounced in small-
area detectors, which have higher R
D
and
less surface area. The effect is also
reduced or eliminated by cooling the
diode, thereby increasing the detector R
D
.
Temperature Effects
Cooling an InAs photodiode reduces
noise and improves detectivity (Fig. 12-4).
Cooling also increases shunt resistance
R
D
as described in the previous section,
allowing more of the photocurrent I
ph
to
reach the contact ring. The result is an
increase in the diode response (Fig. 12-3).
For high-power applications such as
pulsed laser detection, cooling is generally
not necessary. For sensitive, low-power
applications such as temperature meas-
urements, the InAs detector should be
cooled or at least temperature-stabilized.
Stabilizing the temperature near 22°C
room temperature will not improve perform-
ance, but will prevent changes in detector
response due to ambient temperature drift.
Figure 12-4
Detectivity vs Wavelength for J12 Series InAs
Figure 12-3
Example of Response Variation
Across 2mm Active Area
10
12
D* (λ, 1KHz, 1Hz) (cm√Hz/W)
Iph
I
S
R
S
J12T
10
11
-85
E4 (
°C)
5°C
)
V
bias
-0.1V
Relative Response
V
D
C
D
R
D
L
O
A
D
J12
(-6
TE3
-40°C
100%
Contact
Contact
E2 (
J12T
10
10
-40°
C)
0°C
I
ph
= Current generated by incident photons
V
D
= Actual voltage across diode junction
C
D
= Detector junction capacitance
R
D
= Detector shunt resistance
R
s
= Detector series resistance
I
s
= Output signal current
Figure 12-2
Example of InAs Shunt Resistance vs Temperature
1M
-20
E1 (
12T
J
°C)
50%
22°C
10
9
(2
J12
2°C)
0
-1
Active Area
10
8
1
2
3
Wavelength (µm)
4
+.5
-.5
0
+1
Active Area Position (mm)
Figure 12-5
J12TE Detector Response vs Wavelength
& Temperature
100K
Shunt Resistance R
D
(Ω)
Responsivity (A/W)
10K
"Light Spot"
From
Source
Direction
of Spot
Scan
Across
Surface
Detector
Ring
Contact
-1
-.5
0
+.5
+1 mm
1.50
1.25
1.00
0.75
0.50
0.25
0.00
2.0
2.5
22°C
-20°C
-40°C
-65°C
-85°C
1K
250µm dia.
100
10
1mm dia.
R
S
+R
D
0
-80
2mm dia.
-60
-40
-20
0
+20
+40
Active Area Position
3.0
3.5
4.0
Detector Temperature (°C)
Wavelength (µm)
Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
France: LASER COMPONENTS S.A.S., Phone: +33 1 3959 5225, Fax: +33 1 3959 5350, info@lasercomponents.fr
Thermoelectric Cooler Operation
Figure 13-1 shows typical power
requirements for the TE1, TE2 and TE3
coolers. The built-in thermistor can be
used to monitor or control the temperature.
Figure 13-2 shows typical thermistor
resistance vs. temperature values. Sensi-
tivity, cutoff wavelength and response
uniformity are all functions of temperature.
Detector temperature should be optimized
for a particular application.
Operating Circuit
The recommended operating circuit for
most applications is an operational
amplifier in a negative-feedback transim-
pedance configuration (Fig. 13-3). The
feedback circuit converts the detector
output current to a voltage, while the op-
amp maintains the detector near zero-volt
bias for lowest noise.
Because R
D
varies significantly with
temperature, selection of the proper op-
amp will depend on the detector operating
temperature as well as the desired
bandwidth. The feedback resistor R
F
should be at least 10x greater than R
D
for
best signal-to-noise ratio. Judson has
preamplifiers for optimum performance
with each detector type.
For high frequency applications, the
detector may be reverse biased and
terminated into a low impedance load (Fig.
13-4). Maximum reverse bias is 1 volt.
Advantages of InAs
Unlike the photoconductors commonly
used in the 1-3.8 µm wavelength region,
InAs operates in the photovoltaic mode
and does not require a bias current for
operation. This makes InAs the better
choice for DC and low-frequency applica-
tions, as it does not exhibit the low-
frequency or "1/f" noise characteristic of
the photoconductors PbS, PbSe, and
HgCdTe (Fig. 13-5).
InAs also offers superior pulse
response for applications in monitoring
and detecting high-speed pulsed lasers
(Fig. 13-6).
Figure 13-5
Example of NEP vs. Frequency
Figure 13-1
Detector Temperature vs Cooler Current
TE1, TE2 and TE3
Noise Equivalent Power (W/Hz
1/2
)
10
-9
1/f Noise
10
-10
Detector
Temp -30°C
Cold Side Temperature TD (°C)
-70
-50
-30
S
2-
0.25mm
TD
vs
3-S
tag
e
2.0mm
m
0.25m
m
2.0m
Cooler Voltage V (Volts)
I
Typical PbSe
2mm x 2mm
tag
e
-10
10
30
0
m
0.25m
tage
m
1-S
2.0m
V vs I
Cooler
3
2
1
Figure 13-3
Typical J12 Series Operating Circuit
RF > 10x RD
10
-11
InAs 2mm dia
J12TE2-8A6-R02M
10
-12
1
10
100
1K
10K 100K 1M
Frequency (Hz)
Hot side = 27°C
0.2 0.4 0.6 0.8 1.0 1.2
Cooler Current I (Amps)
IS
-
+
Detector
Ios
Vos
Vo = IS • RF
Figure 13-2
Typical Thermistor Curve
Detector Shunt
Impedance
≤
400
Ω
1M
400
Ω
- 50K
Ω
≥
25K
Ω
Thermistor Resistance R
D
(ΚΩ)
Recommended
Cooler Module
CMAMP-TO66-PA5
CMAMP-3CN-PA5
CMAMP-TO66-PA6
CMAMP-3CN-PA6
CMAMP-TO66-PA7
CMAMP-3CN-PA7
Part Number
490130
490132
490146
-----
490139
490141
Figure 13-6
J12 Series Response to 1nsec Laser Pulse
(50Ω Load; V
Bias
= 0; See Fig. 19-4)
Ω
100%
Relative Response
100K
CMAMP assembly includes heat sink, temperature controller
and transimpedance amplifier for the J12TE
packages.
J12-LD2-R250U
22°C
10K
Figure 13-4
High-Speed Operating Circuit
for J12 or J12TE2 Series Detectors
IS
50%
1K
To Oscilloscope
50
W
0
0
2
1
Time (nsec)
3
4
5
100
-80
-60
-40
-20
0
+20
+40
Detector
Detector Temperature (°C)
VBias = 0 to -0.25V
(-1V max)
Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
France: LASER COMPONENTS S.A.S., Phone: +33 1 3959 5225, Fax: +33 1 3959 5350, info@lasercomponents.fr
J12
Indium Arsenide Detectors (1.0 to 3.8 µm)
Description
The J12 Series Indium Arsenide (InAs)
detectors are photovoltaic infrared photodi-
odes sensitive in the 1.0 to 3.8 µm wave-
length region.
Diode sensitivity, speed of response,
impedance and peak wavelength can be
optimized by operation at the proper
temperature. Judson offers a variety of
convenient packages for room temperature
and thermoelectrically cooled operation.
Linear arrays, X-Y position sensors and
special configurations are also available.
J12TE1 Series
1-Stage Thermoelectrically Cooled InAs
The J12TE1 Series detectors are high
quality temperature stabilized InAs
detectors mounted on a one stage
thermoelectric cooler. The TE1 series
was developed for applications such as
temperature monitoring, power meters
and infrared spectroscopy where low cost,
responsivity, stability and low noise are
important issues.
J12TE2 Series
Applications
• Laser Warning Receivers
• Process Control Monitors
• Temperature Sensors
• Pulsed Laser Monitors
• Infrared Spectroscopy
• Power Meters
2-Stage Thermoelectrically Cooled InAs
The J12TE2 Series detectors are high
quality InAs photodiodes mounted with
thermistors on two-stage thermoelectric
coolers and hermetically sealed package.
The 8B6 package is standard, with the
66S and HS1 packages available as
options.
At the standard operating temperature
of -40°C, the J12TE2 Series detectors
have a much higher shunt resistance than
room temperature detectors, resulting in
higher responsivity, lower noise and
better stability for DC or chopped light
applications.
See Figs. 13-1 and 13-2 for thermo-
electric cooler operating information.
Cooler power supplies and temperature
controllers are also available.
Figure 14-1
Typical Detectivity vs Wavelength
for J12 Series InAs
10
12
D* (λ, 1KHz, 1Hz) (cm√Hz/W)
-8
E4 (
12T
J
10
11
)
5°C
)
J12
°C
(-65
TE3
10
10
J12 Series
Room Temperature InAs Detectors
These photodiodes operate at ambient
temperatures and are excellent for wide
bandwidth (DC to 16MHz) applications
such as infrared laser monitors and fast
temperature sensors. The devices are
available in 0.25 mm, 1 mm or 2 mm
diameter active sizes and are mounted in
the 18C, 5AP or convenient LD2 BNC
connector packages.
For low frequency applications (DC to
50KHz) the Model PA-5 transimpedance
gain preamplifier is strongly recom-
mended. The PA-5 has extremely low
voltage noise, low offset voltage and
adjustable gain for the best possible match
to these low shunt resistance detectors.
For high speed applications, the Model
PA-101 (5Hz to 1MHz) and Model PA-410-
50 (DC to 50MHz) preamplifiers can be
used. InAs detectors can be reverse-
biased to reduce junction capacitance and
improve frequency response.
C)
-40°
E2 (
J12T
C)
-20°
E1 (
J12T
J12
(22°
C)
10
9
10
8
1
2
3
Wavelength (µm)
4
J12TE4 Series
4-Stage Thermoelectrically Cooled InAs
The J12TE4 Series detectors are high
quality InAs photodiodes mounted in the
3CN package which includes a built-in
thermistor, four stage thermoelectric
cooler and hermetically sealed package.
J12TE3 Series
3-Stage Thermoelectrically Cooled InAs
The J12TE3 Series detectors are high
quality InAs photodiodes mounted in the
66S package which includes a built-in
thermistor, three stage thermoelectric
cooler and hermetically sealed package.
J12TE3 devices are ideal for critical
military, space or industrial applications
requiring high detectivity, good uniformity
of response and wide bandwidth.
J12TE1:16E
The J12TE1:16E-28PF1-S01M is a 16
element 1-stage thermoelectrically cooled
detector packaged in the 28PF1 package
with a sapphire window. Each element is
1mm x 1mm with center to center spacing
of 1mm.
Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
France: LASER COMPONENTS S.A.S., Phone: +33 1 3959 5225, Fax: +33 1 3959 5350, info@lasercomponents.fr
Active
Model Number
Part
Number
Size
(dia.)
Operating
Tempera-
ture
Cutoff
Wave-
length
@
λ
co
(50%)
(µm)
Respon-
sivity
@
λ
p
(A/W)
1.5
1.0
0.8
1.5
1.5
1.25
(mm)
J12 Series Room Temperature InAs
Shunt
Resistance
R
D
@ V
R
= 10mV
Min.
Typ.
(
Ω
)
(
Ω
)
200
15
5
2000
200
50
12K
1.2K
300
160K
10K
5K
2.5K
400K
25K
6.5K
300
25
10
3000
300
90
24K
2.4K
500
320K
20K
10K
5K
800K
50K
13K
Maximum
NEP
@
λ
peak
and 1KHz
(pW/Hz
1/2
)
6.0
33
71
1.8
5.6
13
.69
2.2
4.4
.18
.71
1.0
1.4
.11
.43
.84
Minimum
D*
@
λ
peak
and 1KHz
(Jones)
(cmHz
1/2
W
-1
)
Capacitance
C
D
@ V
R
= 0V
Optional
Packages
and
Accessories
(pF)
50
400
1600
50
400
1600
50
400
1600
50
400
800
1600
50
400
1600
J12-18C-R250U
420002
0.25
J12-18C-R01M
420003
1.00
22°C
3.60
J12-5AP-R02M
420011
2.00
J12TE1 Series One-Stage Thermoelectrically Cooled InAs
J12TE1-37S-R250U
420088
0.25
J12TE1-37S-R01M
420061
1.00
-20°C
3.50
J12TE1-37S-R02M
420065
2.00
J12TE2 Series Two-Stage Thermoelectrically Cooled InAs
J12TE2-66D-R250U
420083
0.25
J12TE2-66D-R01M
420041
1.00
-40°C
3.45
J12TE2-66D-R02M
420089
2.00
J12TE3 Series Three-Stage Thermoelectrically Cooled InAs
J12TE3-66D-R250U
420081
0.25
J12TE3-66D-R01M
420056
1.00
-65°C
3.40
J12TE3-66D-R1.5M
420063
1.50
J12TE3-66D-R02M
420098
2.00
J12TE4 Series Four-Stage Thermoelectrically Cooled InAs
J12TE4-3CN-R250U
J12TE4-3CN-R01M
J12TE4-3CN-R02M-B
420093
0.25
1.00
2.00
-85°C
3.30
3.7E9
2.7E9
2.5E9
1.3E10
1.6E10
1.3E10
3.2E10
4.1E10
4.1E10
1.2E11
1.5E11
1.3E11
1.2E11
2.9E11
3.6E11
2.1E11
LD2
HS1,
CM21
1.5
HS Amp, HS1,
CM21, CM Amp
1.5
HS Amp, HS1,
CM21, CM Amp
1.5
HS Amp, HS1,
CM21, CM Amp
18C
.187
.110
.10 to
detector
plane
37S
Sapphire Window
Detector Plane
.190
66D
DIMENSION "A"
J12TE2-66D
0.12"
J12TE3-66D
0.06"
0.55
dia.
0.06
Sapphire
Window
3CN
.756 DIA. REF.
0.020 Thk AR Coated
Sapphire Window
0.32
0.28
Dim. "A"
.550 DIA.
.36 Dia.
Min. Clear
Aperture
Sealant
.015 MAX.
Top, Sealant
Outer, Top Cap
0.20
Case(-)
Top, Detector
.428 ± .020
.50 (nom)
0.435
.425 dia.
Pin Circle
Background
Pins
Omitted
.655
.62 ± .020
MAX
(+)
0.5
.10 dia
pin circle
.39 ± .020
.095
Background Pins
Omitted
Side View
6 pins on .200"
bolt circle
0.50
.50 REF.
Side View
.510
SQ
.175
TYP
Side View
Thermistor pins
.147 dia
2 holes
Detector(-)
Detector(+)
5AP
.326
.240
.07 to
detector
plane
Thermistor
0.76
0.56
0.37
Pin
No.
Designation
Thermistor
Detector (-)
Cooler (-)
Cooler (+)
N/C
N/C
Thermistor
Sleeve
Color
Yellow
White
Black
Red
Clear
Clear
Yellow
1.24
0.96
1
8
1
2
3
4
5
7
6
2
3
4
5
6
7
8
Detector (+) Green
.200
.50 (nom)
.20 dia
pin circle
Cooler(+)
Cooler(-)
Detector(-)
Detector(+)
Bottom View
Case(-)
Cooler (+)
0.690
Bottom View
Cooler (-)
Bottom View
Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
France: LASER COMPONENTS S.A.S., Phone: +33 1 3959 5225, Fax: +33 1 3959 5350, info@lasercomponents.fr
(+)
京公网安备 11010802033920号
EEWORLD
