DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK224
RF AMPLIFIER FOR UHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Noise Figure:
• High Power Gain:
• Automatically Mounting:
• Small Package:
NF = 1.8 dB TYP. (f = 900 MHz)
G
PS
= 17 dB TYP. (f = 900 MHz)
PACKAGE DIMENSIONS
(Unit: mm)
0.4
–0.05
0.4
–0.05
+0.1
0.16
–0.06
+0.1
Embossed Type Taping
4 Pins Mini Mold
2.9±0.2
(1.8)
0.85 0.95
2
3
4
5°
+0.1
• Suitable for use as RF amplifier in UHF TV tuner.
2.8
–0.1
+0.2
1.5
–0.1
+0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
≥
10 kΩ
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
(±10)
*1
±8
(±10)
*1
18
18
25
200
125
–55 to +125
V
V
V
V
mA
mW
°C
°C
0.6
–0.05
1
5°
1.1
–0.1
0.8
+0.2
V
5°
0 to 0.1
5°
1.
2.
3.
4.
Source
Drain
Gate 2
Gate 1
Document No. P10576EJ2V0DS00 (2nd edition)
(Previous No. TD-2265)
Date Published August 1995 P
Printed in Japan
+0.1
0.4
–0.05
+0.1
(1.9)
©
1989
1993
3SK224
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff
Voltage
Gate2 to Source Cutoff
Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer
Admittance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Power Gain
Noise Figure
G
PS
NF
15.0
17.0
1.8
2.5
dB
dB
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 900 MHz
I
G1SS
I
G2SS
|y
fs
|
18
22
±20
±20
nA
nA
mS
V
DS
= 0, V
G2S
= 0, V
G1S
=
±8
V
V
DS
= 0, V
G1S
= 0, V
G2S
=
±8
V
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 10 mA
f = 1 kHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 1 MHz
SYMBOL
BV
DSX
MIN.
18
TYP.
MAX.
UNIT
V
TEST CONDITIONS
V
G1S
= V
G2S
= –2 V, I
D
= 10
µ
A
V
DS
= 6 V, V
G2S
= 3 V, V
G1S
= 0.5 V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
µ
A
V
DS
= 6 V, V
G1S
= 3 V, I
D
= 10
µ
A
I
DSX
V
G1S(off)
0.5
–1.5
15.0
+0.5
mA
V
V
G2S(off)
–1.0
+1.0
V
C
iss
C
DSS
C
rss
1.2
0.5
1.7
0.9
0.015
2.2
1.2
0.025
pF
pF
pF
I
DSX
Classification
Class
Marking
I
DSX
(mA)
U94/UID*
U94
0.5 to 7.0
U95/UIE*
U95
5.0 to 15.0
*
Old Specification/New Specification
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due
to those voltage or fields.
2
3SK224
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
– Total Power Dissipation – mW
I
D
– Drain Current – mA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
20
15
10
5
0
3
6
9
V
G2S
= 3 V
V
G1S
= 1.4 V
1.2 V
1.0 V
0.8 V
0.6 V
0.4 V
0.2 V
12
400
300
200
100
15
V
DS
– Drain to Source Voltage – V
0
25
50
75
100
125
T
A
– Ambient Temperature – °C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
I
D
– Drain Current – mA
|y
fs
| – Forward Transfer Admittance – mS
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
32
V
G2S
= 3.0 V
24
2.5 V
16
8
0.5 V
0
–0.5
0
0.5
1.0
1.5
2.0
1.5 V
1.0 V
2.0 V
V
DS
= 6 V
f = 1 kHz
25
20
15
10
5
V
DS
= 6 V
V
G2S
= 3.0 V
2.5 V
2.0 V
1.5 V
1.0 V
0.5 V
0
0.5
1.0
1.5
2.0
0
–0.5
V
G1S
– Gate1 to Source Voltage – V
V
G1S
– Gate1 to Source Voltage – V
|y
fs
| – Forward Transfer Admittance – mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 6 V
40
f = 1 kHz
32
V
G2S
= 3.0 V
24
2.0 V
16
8
0
0.5 V
4
8
1.5 V
1.0 V
12
16
20
2.5 V
C
iss
– Input Capacitance – pF
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
f = 1 MHz
4.0
3.0
2.0
I
D
– Drain Current – mA
1.0
0
–1.0
0
1.0
2.0
3.0
4.0
V
G2S
– Gate2 to Source Voltage – V
3
3SK224
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
f = 1 MHz
2.0
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
f = 900 MHz
I
D
= 10 mA
20 (at V
DS
= 6 V
G
ps
V
G2S
= 3 V)
10
C
DSS
– Output Capacitance – pF
NF – Noise Figure – dB
G
PS
– Power Gain – dB
10
1.5
5
0
1.0
–10
NF
–20
0.5
0
–1.0
0
0
1.0
2.0
3.0
4.0
–2.0
0
2.0
4.0
6.0
8.0
V
G2S
– Gate2 to Source Voltage – V
V
G2S
– Gate2 to Source Voltage – V
900 MHz G
PS
& NF TEST CIRCUIT
V
G2S
1 000 pF
47 kΩ
1 000 pF
to 10 pF
to 10 pF
INPUT
50
Ω
to 10 pF
to 10 pF
L
1
47 kΩ
RFC
L
2
OUTPUT
50
Ω
1 000 pF
1 000 pF
L
1
, L
2
: 35
×
5
×
0.2 mm
V
DD
V
G1S
4
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