DSA1231DA2-55M82000BVAO datasheet, PDF

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DSA1231DA2-55M82000BVAO: DescriptionCMOS Output Clock Oscillator, 55.82MHz Nom; CategoryPassive components oscillator; File Size849KB，30 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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DSA1231DA2-55M82000BVAO Overview

CMOS Output Clock Oscillator, 55.82MHz Nom

DSA1231DA2-55M82000BVAO Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	145213357891
package instruction	VDFN, 6 PIN
Reach Compliance Code	compliant
YTEOL	6.38
Other features	STANDBY; ENABLE/DISABLE FUNCTION
Frequency Adjustment - Mechanical	NO
frequency stability	25%
Installation features	SURFACE MOUNT
Number of terminals	6
Nominal operating frequency	55.82 MHz
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Oscillator type	CMOS
Output load	15 pF
Encapsulate equivalent code	SOLCC6,.08,32
physical size	2.5mm x 2.0mm x 0.9mm
Filter level	AEC-Q100
Maximum supply voltage	3.63 V
Minimum supply voltage	2.25 V
surface mount	YES
maximum symmetry	55/45 %

DSA1231DA2-55M82000BVAO Preview

DSA12X1

High Performance CMOS MEMS Oscillator for Automotive

Features

•

Automotive AEC-Q100 Qualified

Wide Frequency Range: 2.5 MHz to 170 MHz

Very Low RMS Phase Jitter: <650 fs (typ.)

High Stability: ±20 ppm, ±25 ppm, ±50 ppm

Wide Temperature Range:

- Automotive Grade 1: –40°C to +125°C

- Automotive Grade 2: –40°C to +105°C

- Automotive Grade 3: –40°C to +85°C

Small Industry-Standard Footprints

- 2.5 mm x 2.0 mm

- 3.2 mm x 2.5 mm

- 5.0 mm x 3.2 mm

- 7.0 mm x 5.0 mm

Excellent Shock and Vibration Immunity

- Qualified to MIL-STD-883

High Reliability

- 20x Better MTF than Quartz Oscillators

Supply Range of 2.25V to 3.63V

Standby, Frequency Select, and Output Enable

Functions

Lead-Free and RoHS-Compliant

General Description

The DSA12x1 family of high performance oscillators

utilizes the latest generation of silicon MEMS

technology that reduces close-in noise and provides

excellent jitter and stability over a wide range of supply

voltages and temperatures. By eliminating the need for

quartz or SAW technology, MEMS oscillators

significantly enhance reliability and accelerate product

development,

while

meeting

stringent

clock

performance criteria for automotive applications.

The DSA12x1 family features a control function on pin

1 or pin 2 that permits either a standby feature

(complete power down when STDBY is low), output

enable (output is tri-stated with OE low), or a frequency

select (choice of two frequencies selected by FS

high/low). See the

Product Identification System

section for detailed information.

All oscillators are available in industry-standard

packages, including the small 2.5 mm x 2.0 mm, and

are “drop-in” replacements for standard 4-pin and 6-pin

CMOS quartz crystal oscillators.

•

Package Types

DSA1201/1211/1221

6-Lead CDFN/VDFN

OE/STDBY/FS

GND

Applications

• Automotive Infotainment

• Automotive ADAS

• In-Vehicle Networking, CAN Bus, Ethernet

VDD

CLK

DSA1231/1241/1251

6-Lead CDFN/VDFN

OE/STDBY/FS

GND

VDD

CLK



2020 Microchip Technology Inc.

DS20006385A-page 1

DSA12X1

Functional Block Diagrams

DSA1201/1211/1221

Pin 1

OE/STDBY/FS

DIGITAL

CONTROL

SUPPLY

REGULATION

Pin 6

VDD

Pin 2

MEMS

RESONATOR

TEMP SENSOR +

CONTROL &

COMPENSATION

Pin 5

PLL

OUTPUT

DIV

Pin 3

GND

Pin 4

CLK

DSA1231/1241/1251

Pin 1

DIGITAL

CONTROL

SUPPLY

REGULATION

Pin 6

VDD

Pin 2

OE/STDBY/FS

MEMS

RESONATOR

TEMP SENSOR +

CONTROL &

COMPENSATION

Pin 5

PLL

OUTPUT

DIV

Pin 3

GND

Pin 4

CLK

DS20006385A-page 2



2020 Microchip Technology Inc.

DSA12X1

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage .......................................................................................................................................... –0.3V to +4.0V

Input Voltage .................................................................................................................................... –0.3V to V

+ 0.3V

ESD Protection (HBM) ...............................................................................................................................................4 kV

ESD Protection (MM) ................................................................................................................................................400V

ESD Protection (CDM) ............................................................................................................................................1.5 kV

† Notice:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated

in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended

periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

= 2.5V ±10% or 3.3V ±10%; T

= –40°C to +125°C, unless noted.

Parameter

Supply Voltage

Supply Current

Symbol

—

Standby Current

STDBY

Δf

—

Frequency Stability

—

Aging

Startup Time

Δf

Input Logic Levels

Output Disable Time

Output Enable Time

Enable Pull-Up Resistor

Frequency

Output Logic Level High

Output Logic Level Low

—

0.75 x

—

2.5

0.8 x

—

Output Transition Time, Rise

20% to 80%;C

=15 pF

—

2.5

—

5.5

—

1.5

—

1.3

1.2

1.6

2.4

—

Min.

2.25

—

Typ.

—

Max.

3.63

—

Units

Conditions

Note 1

Output enabled, CMOS (no load),

OUT

= 100 MHz

Output disabled (tri-state),

OUT

= 100 MHz

Input pin = STDBY = Asserted

= 3.3V)

Includes frequency variations due

to initial tolerance, temp., and

power supply voltage

First year @ 25°C

Per year after first year

From 90% V

to valid clock

output, T = +25°C,

Note 2

Input logic high

±20

±25

±50

±5

±1

—

0.25 x

350

—

170

—

0.2 x

—

μA

ppm

Input logic low

MΩ

MHz

Note 3

STDBY

Pull-up resistor on pin 1,

Note 4

—

I = ±12 mA (High Drive)

I = ±10 mA (Standard Drive)

I = ±8 mA (Mid Drive)

I = ±6 mA (Low Drive)

Standard Drive Strength

High Drive Strength

Mid Drive Strength

Low Drive Strength



2020 Microchip Technology Inc.

DS20006385A-page 3

DSA12X1

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics:

= 2.5V ±10% or 3.3V ±10%; T

= –40°C to +125°C, unless noted.

Parameter

Output Transition Time, Fall

20% to 80%;C

=15 pF

Output Duty Cycle

Period Jitter, Peak-to-Peak

Cycle-to-Cycle Jitter, Peak

Integrated Phase Noise

(Random)

Note 1:

Symbol

Min.

—

SYM

PTP

—

Typ.

1.3

1.1

1.8

2.4

—

0.65

Max.

—

RMS

Units

Conditions

Standard Drive Strength

High Drive Strength

Mid Drive Strength

Low Drive Strength

—

OUT

= 100 MHz, High Drive

OUT

= 100 MHz, High Drive

12 kHz to 20 MHz @ 100 MHz, T

= +105°C

pin should be filtered with a 0.1

μF

capacitor.

is the time to 100 ppm stable output frequency after V

is applied and outputs are enabled.

: See the

Output Waveform

and the

Test Circuit

sections for more information.

Output is enabled if pad is floated (not connected).

DS20006385A-page 4



2020 Microchip Technology Inc.

DSA12X1

TEMPERATURE SPECIFICATIONS

Note 1

Parameters

Temperature Ranges

Maximum Junction Temperature

Storage Temperature Range

Lead Temperature

Note 1:

—

–55

—

+150

+260

°C

—

Soldering, 40s

Symbol

Min.

Typ.

Max.

Units

Conditions

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., T

, T



). Exceeding the max-

imum allowable power dissipation will cause the device operating junction temperature to exceed the max-

imum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.



2020 Microchip Technology Inc.

DS20006385A-page 5

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