2N3499 datasheet, PDF - EEWORLD Datasheet

2N3499: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size100KB，1 Pages; ManufacturerRaytheon Company; Websitehttps://www.raytheon.com/

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Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1882126004
package instruction	TO-5, 3 PIN
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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