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BFS 380L6 E6327

Description
transistor GP bjt npn 6V tslp-6
Categorysemiconductor    Discrete semiconductor   
File Size99KB,3 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BFS 380L6 E6327 Overview

transistor GP bjt npn 6V tslp-6

BFS380L6
NPN Silicon RF Transistor
Preliminary data
High current capability and low figure for
wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz
Built in 2 transistors ( TR1, TR2: die as BFR380L3)
6
T R 1
5
T R 2
4
4
5
6
1
2
3
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1







P-TSLP-6-1
1
2
3
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFS380L6
Maximum Ratings
Parameter
Marking
Pin Configuration
Package
FC
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
6
15
15
2
80
14
380
150
-65 ... 150
-65 ... 150
Value
140
Unit
K/W
mW
°C
mA
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
96°C
Jun-11-2003
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