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MA4L784

Description
Mixer Diode, L Band, Silicon, ML4-N1, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size176KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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MA4L784 Overview

Mixer Diode, L Band, Silicon, ML4-N1, 4 PIN

MA4L784 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionR-PBCC-N4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.55 V
frequency bandL BAND
JESD-30 codeR-PBCC-N4
Number of components1
Number of terminals4
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Base Number Matches1
Schottky Barrier Diodes (SBD)
MA4L784
Silicon epitaxial planar type
Unit: mm
For high speed switching
For small current rectification
3
2
0.020
±0.010
M
ain
Di
sc te
on na
tin nc
ue e/
d
I
Features
High-density mounting is possible
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
Low forward voltage V
F
and good rectification efficiency
1008-type mold leadless 4-pin package
4
1
1.00
±0.05
0.80
±0.05
0.60
±0.05
4
1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
I
F
Reverse voltage (DC)
Peak reverse voltage
V
RM
I
FM
T
j
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
T
stg
−55
to
+125
on
tin
Parameter
Symbol
I
R
ue
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
/D
V
F
C
t
t
rr
Note) 1. This product is sensitive to electric shock (static electricity, etc.).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t
rr
measuring instrument
Ma
int
en
Bias Application Unit N-50BU
t
r
an
Reverse recovery time
*
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
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.
3
0.30
±0.03
0.60
0.20
±0.03
2
0.05
±0.03
Rating
30
30
Unit
V
V
1 : Anode
2 : N.C.
3: Cathode
4 : Cathode
ML4-N1 Package
100
300
125
mA
mA
°C
°C
Marking Symbol: Y
Internal Connection
3
2
4
1
Conditions
Min
Typ
Max
15
Unit
µA
V
pF
ns
V
R
=
30 V
isc
I
F
=
100 mA
0.55
ce
V
R
=
0 V, f
=
1 MHz
20
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
2.0
Input Pulse
t
p
10%
t
I
F
Output Pulse
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.50
0.05
±0.03
Publication date: July 2001
SKH00101AED
1

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