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BSS119 E7796

Description
mosfet N-CH 100v 170ma sot-23
Categorysemiconductor    Discrete semiconductor   
File Size84KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSS119 E7796 Overview

mosfet N-CH 100v 170ma sot-23

Rev. 1.5
BSS119
SIPMOS
Small-Signal-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Product Summary
V
DS
100
6
0.17
PG-SOT23
V
A
R
DS(on)
I
D
3
Drain
pin 3
Qualified according to AEC Q101
Gate
pin1
Source
pin 2
2
1
VPS05161
Type
BSS119
BSS119
Package
PG-SOT23
PG-SOT23
Pb-free
Yes
Yes
Tape and Reel Information
L6433: 10000 pcs/reel
L6327: 3000 pcs/reel
Marking
sSH
sSH
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
0.17
0.13
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
0.68
6
±20
0.36
-55... +150
55/150/56
kV/µs
V
W
°C
Reverse diode dv/dt
I
S
=0.17A,
V
DS
=80V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
Page 1
2011-06-03

BSS119 E7796 Related Products

BSS119 E7796 BSS119H6327 BSS119H6433
Description mosfet N-CH 100v 170ma sot-23 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Maker - Infineon Infineon
package instruction - GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
Contacts - 3 3
Reach Compliance Code - compliant compliant
ECCN code - EAR99 EAR99
Other features - LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 100 V 100 V
Maximum drain current (ID) - 0.17 A 0.17 A
Maximum drain-source on-resistance - 6 Ω 6 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) - 4.1 pF 4.1 pF
JESD-30 code - R-PDSO-G3 R-PDSO-G3
JESD-609 code - e3 e3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Polarity/channel type - N-CHANNEL N-CHANNEL
Guideline - AEC-Q101 AEC-Q101
surface mount - YES YES
Terminal surface - MATTE TIN MATTE TIN
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - 40 40
Transistor component materials - SILICON SILICON
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