NEC's UPA814T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device suited for
various hand-held wireless applications.
3
4
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
mW
°C
°C
RATINGS
9
6
2
100
110
200
150
-65 to +150
0.9
±
0.1
0.7
0.15
- 0.05
0 ~ 0.1
+0.10
T
J
T
STG
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE1
f
T
Cre
2
|S
21E
|
2
NF
h
FE1
/h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 1 V, I
C
= 3 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
GHz
pF
dB
dB
0.85
UNITS
µA
µA
80
110
9.0
0.75
6.5
1.5
0.85
MIN
UPA814T
S06
TYP
MAX
0.1
0.1
160
Notes: 1. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA814T-T1, 3K per reel.
California Eastern Laboratories
UPA814T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 1 V
Total Power Dissipation, P
T
(mW)
Free Air
200
El
em
Collector Current, I
C
(mA)
2
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
en
ts
Pe
in
rE
lem
To
t
al
en
t
100
0
50
100
150
0.01
0
0.5
1
Ambient Temperature, T
A
(°C)
Base to Emitter Voltage, V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200
µA
200
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
Collector Current, I
C
(mA)
180
µA
160
µA
20
140
µA
120
µA
100
µA
10
80
µA
60
µA
40
µA
l
B
= 20
µA
0
0
1
2
3
4
5
6
0.1 0.2
0.5
1
2
5
10
20
50 100
DC Current Gain, h
FE
100
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
10
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
Gain Bandwidth Product, f
T
(GHz)
5
Insertion Power Gain, IS
21e
I
2
(dB)
V
CE
= 1 V
f= 2 GHz
V
CE
= 1 V
f= 2 GHz
5
0
1
2
3
5
7
10
0
1
2
3
5
7
10
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
UPA814T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
NOISE FIGURE vs.
COLLECTOR CURRENT
3
V
CE
= 1 V
f = 2 GHz
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Feddback Capacitance, C
RE
(pF)
Noise Figure, NF (dB)
1.0
2
0.5
f = 1 GHz
1
0
1
2
3
5
7
10
0.1
1
5
10
20
Collector Current, l
C
(mA)
Collector to Base Voltage, V
CB
(V)
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
NOISE FIGURE vs.
FREQUENCY
V
CE
= 1 V
lc = 5 mA
1.5
Maximum Available Power Gain, MAG (dB)
Insertion Power Gain, IS
21e
I
2
(dB)
V
CE
= 1 V
lc = 5 mA
MAG
20
IS
21E
I
2
Noise Figure, NF (dB)
0.5
1
5
30
1
10
0
0.1
0.5
0.1
0.5
1.0
2
Frequency, f (GHz)
Frequency, f (GHz)
ORDERING INFORMATION
PART NUMBER
UPA814T-T1-A
QUANTITY
3000
PACKAGING
Tape & Reel
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -1/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Lead (Pb)
Mercury
Cadmium
Hexavalent Chromium
PBB
PBDE
Concentration Limit per RoHS
(values are not yet fixed)
< 1000 PPM
< 1000 PPM
< 100 PPM
< 1000 PPM
< 1000 PPM
< 1000 PPM
Concentration contained
in CEL devices
-A
Not Detected
Not Detected
Not Detected
Not Detected
Not Detected
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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