AON6280
80V N-Channel MOSFET
General Description
The AON6280 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R
DS(ON)
, Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=6V)
80V
85A
< 4.1mΩ
< 5.0mΩ
100% UIS Tested
100% R
g
Tested
DFN5X6
Top View
Bottom View
1
2
3
4
Top View
D
8
7
6
5
G
S
PIN1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
80
±20
85
65
230
17
13
50
125
83
33
7.3
4.7
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
Rev 1 : Mar. 2012
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Page 1 of 6
AON6280
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=80V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=6V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
G
Min
80
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
1
5
±100
2
230
3.4
T
J
=125°
C
5.8
4
76
0.7
1
85
3930
4.1
7
5
2.6
3.2
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
0.3
V
GS
=0V, V
DS
=40V, f=1MHz
592
66
0.7
58
1.1
82
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
1in
2
V
GS
=10V, V
DS
=40V, I
D
=20A
15
14
13
V
GS
=10V, V
DS
=40V, R
L
=2Ω,
R
GEN
=3Ω
6
32
9
36
153
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Mar. 2012
www.aosmd.com
Page 2 of 6
AON6280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
5V
6V
80
10V
4.5V
100
V
DS
=5V
80
60
I
D
(A)
I
D
(A)
40
4V
20
V
GS
=3.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
10
Normalized On-Resistance
8
R
DS(ON)
(mΩ)
Ω
6
V
GS
=6V
4
2
0
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
V
GS
=10V
60
40
125°C
25°C
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
20
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
V
GS
=10V
I
D
=20A
17
5
2
V
GS
=6V
I
D
=20A
10
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
12
I
D
=20A
10
8
R
DS(ON)
(mΩ)
Ω
6
4
2
0
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
25°C
1.0E+02
1.0E+01
1.0E+00
125°C
I
S
(A)
1.0E-01
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
40
Rev 1 : Mar. 2012
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AON6280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=40V
I
D
=20A
8
Capacitance (pF)
4000
5000
C
iss
V
GS
(Volts)
6
3000
4
2000
C
oss
1000
C
rss
2
0
0
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
20
60
0
0
10
30
40
50
60
70
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
80
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
10
V
DS
(Volts)
100
1000
10µs
500
400
10µs
Power (W)
T
J(Max)
=150°C
T
C
=25°C
R
DS(ON)
100µs
DC
T
J(Max)
=150°C
T
C
=25°C
1ms
10ms
300
200
100
0
0.0001
17
5
2
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJC
=1.5°C/W
40
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1 : Mar. 2012
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Page 4 of 6
AON6280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
I
AR
(A) Peak Avalanche Current
100
Power Dissipation (W)
1000
80
T
A
=25°C
100
T
A
=150°C
T
A
=100°C
60
40
20
T
A
=125°C
10
1
10
100
Time in avalanche, t
A
(µs)
µ
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
75
100
125
T
CASE
(°C)
°
Figure 13: Power De-rating (Note F)
25
50
150
100
10000
T
A
=25°C
80
Current rating I
D
(A)
Power (W)
1000
60
100
40
17
5
2
10
20
10
0
0
50
75
100
125
T
CASE
(°C)
°
Figure 14: Current De-rating (Note F)
25
150
1
0.00001
0.001
0.1
10
0
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=55°C/W
1
40
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1 : Mar. 2012
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