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HVL375C

Description
15.75pF, SILICON, VARIABLE CAPACITANCE DIODE, EFP-2
CategoryDiscrete semiconductor    diode   
File Size45KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HVL375C Overview

15.75pF, SILICON, VARIABLE CAPACITANCE DIODE, EFP-2

HVL375C Parametric

Parameter NameAttribute value
package instructionEFP-2
Contacts2
Manufacturer packaging codeEFP-2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode Capacitance Tolerance4.76%
Minimum diode capacitance ratio4
Nominal diode capacitance15.75 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
HVL375C
Variable Capacitance Diode for VCO
REJ03G0223-0100Z
Rev.1.00
Apr 28, 2004
Features
Narrow terminal Capacitance deviation.
Low series resistance. (r
s
= 1.1
max)
Good C-V linearity.
Extremely small Flat Package (EFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL375C
Laser Mark
H
Package Code
EFP
Pin Arrangement
Cathode mark
Mark
1
H
2
1. Cathode
2. Anode
Rev.1.00, Apr 28, 2004, page 1 of 4
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