MT18HVS25672PKZ-80EXX datasheet, PDF

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MT18HVS25672PKZ-80EXX: DescriptionDDR DRAM, 256MX72, CMOS, HALOGEN FREE, DIMM-244; Categorystorage storage; File Size367KB，16 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT18HVS25672PKZ-80EXX Overview

DDR DRAM, 256MX72, CMOS, HALOGEN FREE, DIMM-244

MT18HVS25672PKZ-80EXX Parametric

Parameter Name	Attribute value
Maker	Micron Technology
Parts packaging code	DIMM
package instruction	HALOGEN FREE, DIMM-244
Contacts	244
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Other features	AUTO REFRESH
JESD-30 code	R-XDMA-N244
JESD-609 code	e4
length	82 mm
memory density	19327352832 bit
Memory IC Type	DDR DRAM
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	244
word count	268435456 words
character code	256000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256MX72
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
Maximum seat height	3.8 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	DUAL
width	18.2 mm

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2GB, 4GB (x72, ECC, DR) 244-Pin DDR2 VLP Mini-RDIMM

Features

DDR2 SDRAM VLP Mini-RDIMM

MT18HVS25672PKZ – 2GB

MT18HVS51272PKZ – 4GB

Features

• 244-pin, very low profile mini-registered dual in-line

memory module (VLP Mini-RDIMM)

• Fast data transfer rates: PC2-3200, PC2-4200,

PC2-5300, or PC2-6400

• 2GB (256 Meg x 72) or 4GB (512 Meg x 72)

• Supports ECC error detection and correction

• Dual-rank, TwinDie™ (2COB) DRAM devices

• V

= V

DDQ

= 1.8V

• V

DDSPD

= 1.7–3.6V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Multiple internal device banks for concurrent

operation

• Programmable CAS# latency (CL)

• Posted CAS# additive latency (AL)

• WRITE latency = READ latency - 1

• Programmable burst lengths (BL): 4 or 8

• Adjustable data-output drive strength

• 64ms, 8192-cycle refresh

• On-die termination (ODT)

• Serial presence-detect (SPD) with EEPROM

• Gold edge contacts

• Halogen-free

Table 1: Key Timing Parameters

Speed

Grade

-80E

-800

-667

-53E

-40E

Industry

Nomenclature

PC2-6400

PC2-5300

PC2-4200

PC2-3200

Data Rate (MT/s)

CL = 6

800

–

CL = 5

800

667

–

CL = 4

533

553

400

CL = 3

400

RCD

Figure 1: 244-Pin VLP Mini-RDIMM

Module height: 18.2mm (0.72 in)

Options

• Parity

• Operating temperature

– Commercial (0°C

≤

+70°C)

– Industrial (–40°C

≤

+85°C)

• Package

– 244-pin DIMM (halogen-free)

• Frequency/CL

– 2.5ns @ CL = 5 (DDR2-800)

– 2.5ns @ CL = 6 (DDR2-800)

– 3.0ns @ CL = 5 (DDR2-667)

Notes:

Marking

None

-80E

-800

-667

1. Contact Micron for industrial temperature

module offerings.

2. CL = CAS (READ) latency; registered mode

will add one clock cycle to CL.

3. Not available in 4GB module density.

(ns)

12.5

(ns)

12.5

(ns)

PDF: 09005aef83d94997

hvs18c256_512x72pkz.pdf - Rev. D 11/12 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

MT18HVS25672PKZ-80EXX Related Products

	MT18HVS25672PKZ-80EXX	MT18HVS25672PKZ-800XX	MT18HVS51272PKIZ-800XX	MT18HVS25672PKZ-667XX	MT18HVS25672PKZ-667H1	MT18HVS25672PKIZ-800XX	MT18HVS51272PKIZ-667XX	MT18HVS25672PKIZ-667XX	MT18HVS25672PKIZ-80EXX
Description	DDR DRAM, 256MX72, CMOS, HALOGEN FREE, DIMM-244	DDR DRAM, 256MX72, CMOS, HALOGEN FREE, DIMM-244	DDR DRAM, 512MX72, CMOS, HALOGEN FREE, DIMM-244	DDR DRAM, 256MX72, CMOS, HALOGEN FREE, DIMM-244	DDR DRAM Module, 256MX72, CMOS, HALOGEN FREE, RDIMM-244	DDR DRAM, 256MX72, CMOS, HALOGEN FREE, DIMM-244	DDR DRAM, 512MX72, CMOS, HALOGEN FREE, DIMM-244	DDR DRAM, 256MX72, CMOS, HALOGEN FREE, DIMM-244	DDR DRAM, 256MX72, CMOS, HALOGEN FREE, DIMM-244
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	HALOGEN FREE, DIMM-244	DIMM,	DIMM,	HALOGEN FREE, DIMM-244	,	DIMM,	DIMM,	DIMM,	DIMM,
Contacts	244	244	244	244	244	244	244	244	244
Reach Compliance Code	unknown	compliant	compliant	compliant	unknown	compliant	compliant	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Other features	AUTO REFRESH	AUTO REFRESH	AUTO REFRESH	AUTO REFRESH	AUTO/SELF REFRESH	AUTO REFRESH	AUTO REFRESH	AUTO REFRESH	AUTO REFRESH
JESD-30 code	R-XDMA-N244	R-XDMA-N244	R-XDMA-N244	R-XDMA-N244	R-XZMA-N244	R-XDMA-N244	R-XDMA-N244	R-XDMA-N244	R-XDMA-N244
JESD-609 code	e4	e4	e4	e4	e4	e4	e4	e4	e4
length	82 mm	82 mm	82 mm	82 mm	82 mm	82 mm	82 mm	82 mm	82 mm
memory density	19327352832 bit	19327352832 bit	38654705664 bit	19327352832 bit	19327352832 bit	19327352832 bit	38654705664 bit	19327352832 bi	19327352832 bi
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM MODULE	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	72	72	72	72	72	72	72	72	72
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	244	244	244	244	244	244	244	244	244
word count	268435456 words	268435456 words	536870912 words	268435456 words	268435456 words	268435456 words	536870912 words	268435456 words	268435456 words
character code	256000000	256000000	512000000	256000000	256000000	256000000	512000000	256000000	256000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	70 °C	70 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-	-	-40 °C	-	-	-40 °C	-40 °C	-40 °C	-40 °C
organize	256MX72	256MX72	512MX72	256MX72	256MX72	256MX72	512MX72	256MX72	256MX72
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Maximum seat height	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	ZIG-ZAG	DUAL	DUAL	DUAL	DUAL
width	18.2 mm	18.2 mm	18.2 mm	18.2 mm	18.2 mm	18.2 mm	18.2 mm	18.2 mm	18.2 mm
Maker	Micron Technology	-	-	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
encapsulated code	DIMM	DIMM	DIMM	DIMM	-	DIMM	DIMM	DIMM	DIMM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified

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