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APTCV90TL12T3G

Description
power module igbt quad 900v sp3
CategoryDiscrete semiconductor    The transistor   
File Size356KB,10 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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APTCV90TL12T3G Overview

power module igbt quad 900v sp3

APTCV90TL12T3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionFLANGE MOUNT, R-XUFM-X32
Contacts32
Reach Compliance Codecompliant
Shell connectionISOLATED
Maximum collector current (IC)80 A
Collector-emitter maximum voltage1200 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X32
Number of components4
Number of terminals32
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)280 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)370 ns
Nominal on time (ton)80 ns
VCEsat-Max2.2 V
APTCV90TL12T3G
Trench & Field Stop IGBT4 Q2, Q3:
V
CES
= 1200V ; I
C
= 40A @ Tc = 80°C
Super junction MOSFET Q1, Q4:
V
DSS
= 900V ; I
D
= 23A @ Tc = 80°C
Application
Solar converter
Uninterruptible Power Supplies
Features
Q2, Q3 Trench + Field Stop IGBT 4
- Low voltage drop
- Low leakage current
- Low switching losses
-
-
-
-
-
Q1, Q4 Super junction MOSFET
Ultra low R
DSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Three level inverter Power Module
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
APTCV90TL12T3G – Rev 3 November, 2017
All ratings @ T
j
= 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
www.microsemi.com
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