EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA1834

Description
Low Vce(sat) Transistor (Strobe flash) (-20V, -10A)
CategoryDiscrete semiconductor    The transistor   
File Size60KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SA1834 Overview

Low Vce(sat) Transistor (Strobe flash) (-20V, -10A)

2SA1834 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)15 A
ConfigurationSingle
Minimum DC current gain (hFE)120
JESD-609 codee2
Polarity/channel typePNP
Maximum power dissipation(Abs)10 W
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Base Number Matches1
2SA1834
Transistors
Low V
CE(sat)
Transistor (Strobe flash)
(−20V,
−10A)
2SA1834
Features
1) Low saturation voltage,
typically V
CE(sat)
=
−0.16V
at I
C
/ I
B
=
−4A
/
−50mA.
2) High current capacity, typically I
C
= –10A for DC
operation and –15A for 10ms pulse.
3) Complements the 2SC5001.
External dimentions
(Unit : mm)
CPT3
6.5
5.1
2.3
0.5
5.5
1.5
0.9
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SA1834
CPT3
RS
TL
2500
(1)Base
(2)Collector
(3)Emitter
0.75
0.65
0.9
(1)
2.3
(2)
(3)
2.3
0.8Min.
0.5
1.0
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Tj
Tstg
Limits
−30
−20
−6
−10
−15
−2
1
10
150
−55
to
+150
Unit
V
V
V
A
A
A
W
W(Tc=25
°C
)
°C
°C
Single pulse
Pw=10ms
Electrical characteristics
(Ta=25
°
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
Cob
Min.
−30
−20
−6
180
82
Typ.
−0.16
−0.9
150
220
Max.
−1
−1
−0.25
−1.2
560
Unit
V
V
V
µA
µA
V
V
MHz
pF
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−20V
V
EB
=−5V
I
C
/I
B
=−4A/−0.05A
I
C
/I
B
=−4A/−0.05A
V
CE
=−2V
, I
C
=−0.5A
V
CE
=−2V
, I
C
=−4A
V
CE
=−5V
, I
E
=1.5A
, f=50MHz
V
CB
=−10V
, I
E
=0A
, f=1MHz
Conditions
2.5
1.5
9.5
Measured using pulse current.
Rev.A
1/3

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1154  1231  740  2662  1165  24  25  15  54  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号