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UPA606T-T1-A

Description
mosfet 2N-CH 50v 0.1A SC-59
CategoryDiscrete semiconductor    The transistor   
File Size173KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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UPA606T-T1-A Overview

mosfet 2N-CH 50v 0.1A SC-59

UPA606T-T1-A Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time1 week
ConfigurationSEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)0.1 A
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance30 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)300 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

UPA606T-T1-A Related Products

UPA606T-T1-A UPA606T
Description mosfet 2N-CH 50v 0.1A SC-59 100mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PACKAGE-6
Is it Rohs certified? conform to incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage 50 V 50 V
Maximum drain current (Abs) (ID) 0.1 A 0.1 A
Maximum drain current (ID) 0.1 A 0.1 A
Maximum drain-source on-resistance 30 Ω 30 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G6 R-PDSO-G6
Number of components 2 2
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 300 W 0.3 W
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON

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