VS-ST083SP Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors (Stud Version), 85 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
TO-94 (TO-209AC)
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
Circuit configuration
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
TO-94 (TO-209AC)
Single SCR
85 A
400 V, 800 V, 1000 V, 1200 V
2.15 V
2450 A
2560 A
200 mA
85 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
85
85
135
2450
2560
30
27
400 to 1200
10 to 20
-40 to +125
UNITS
A
°C
A
A
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-ST083S
08
10
12
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
1100
1300
30
I
DRM
/I
RRM
MAX.
AT T
J
= T
J
MAX.
mA
Revision: 24-Jan-18
Document Number: 94334
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST083SP Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 μs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
210
200
150
70
50
V
DRM
50
60
22/0.15
120
120
80
25
50
50
85
330
350
320
220
50
V
DRM
-
60
22/0.15
270
210
190
85
50
-
85
2540
1190
630
250
50
V
DRM
-
60
22/0.15
1930
810
400
100
50
-
85
V
A/μs
°C
W/μF
A
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current at
case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 77 °C case temperature
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
85
85
135
2450
2560
2060
Sinusoidal half wave,
initial T
J
= T
J
maximum
2160
30
27
21
19
300
2.15
1.46
1.52
2.32
2.34
600
1000
m
mA
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
I
TM
= 300 A, T
J
= T
J
maximum, t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
Maximum turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
T
J
= T
J
max., V
DRM
= Rated V
DRM
, I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum, I
TM
= 100 A,
commutating dI/dt = 10 A/μs
V
R
= 50 V, t
p
= 200 μs, dV/dt = 200 V/μs
10
VALUES
MIN. MAX.
1000
0.80
μs
20
UNITS
A/μs
Revision: 24-Jan-18
Document Number: 94334
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST083SP Series
www.vishay.com
Vishay Semiconductors
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
30
UNITS
V/μs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and
off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
40
5
5
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat, and greased
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.195
0.08
15.5
(137)
14
(120)
130
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-94 (TO-209AC)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.034
0.041
0.052
0.076
0.126
RECTANGULAR CONDUCTION
0.025
0.042
0.056
0.079
0.127
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 24-Jan-18
Document Number: 94334
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST083SP Series
www.vishay.com
Vishay Semiconductors
130
ST083S Series
R
thJC
(DC) = 0.195 K/W
130
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
ST083S Series
R
thJC
(DC) = 0.195 K/W
120
120
110
100
90
80
70
110
Ø
Ø
Conduction angle
100
Conduction period
30°
60°
90°
120°
0
20
40
60
80
180°
100
DC
120
140
90
30°
80
0
10
20
30
40
50
60
70
80
90
60°
90° 120°
180°
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
180
180
Maximum Average On-State
Power Loss (W)
Maximum Average On-State
Power Loss (W)
160
140
120
100
80
60
40
20
0
0
10
180°
120°
90°
60°
30°
160
140
120
100
80
60
40
20
0
25
0.4
0.
3
0.5
0.
2
K/
W
R
th
K/
W
SA
=
1
0.
RMS limit
K/
W
K/
W
W
K/
-
Δ
R
0.8
K/W
/W
Ø
Conduction angle
ST083S Series
T
J
= 125 °C
20
30
40
50
60
70
80
90
1.2
K
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
250
Maximum Average On-State
Power Loss (W)
Maximum Average On-State
Power Loss (W)
200
150
DC
180°
120°
90°
60°
30°
250
R
th
SA
200
0.2
0.4
0.3
=
RMS limit
K/
W
0.
1
K/
W
150
100
Ø
Conduction period
ST083S Series
T
J
= 125 °C
100
K/W
K/W
0.5
K/W
0.8
K/W
1.2 K
/W
-
Δ
R
50
50
0
0
20
40
60
80
100
120
140
0
25
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 24-Jan-18
Document Number: 94334
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST083SP Series
www.vishay.com
Vishay Semiconductors
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady state value
R
thJC
= 0.195 K/W
(DC operation)
Peak Half Sine Wave On-State Current (A)
2200
2000
1800
1600
1400
1200
1000
1
At any rated load condition and with
rated V
RRM
applied following surge
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0.1
ST083S Series
ST083S Series
10
100
0.01
0.001
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Peak Half Sine Wave On-State Current (A)
Q
rr
- Maximum Reverse Recovery
Charge (µC)
2600
2400
2200
2000
1800
1600
1400
1200
ST083S Series
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum non repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
160
140
120
I
TM
= 200 A
100
I
TM
= 100 A
80
60
I
TM
= 50 A
40
20
0.1
1
10
20
30
40
50
60
70
80
90
100
ST083S Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
1000
0.01
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 9 - Reverse Recovered Charge Characteristics
Instantaneous On-State Current (A)
10 000
120
I
rr
- Maximum Reverse Recovery
Current (A)
110
100
90
80
70
60
50
40
30
20
10
10
20
30
40
50
60
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
T
J
= 25 °C
1000
T
J
= 125 °C
I
TM
= 50 A
ST083S Series
T
J
= 125 °C
ST083S Series
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
70
80
90
100
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 24-Jan-18
Document Number: 94334
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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