LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
FEATURES
●
R
DS(ON)
≦85m
@V
GS
=4.5V
●
R
DS(ON)
≦115m
@V
GS
=2.5V
●
R
DS(ON)
≦135m
@V
GS
=1.8V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
●
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
2
3
LN2302ALT1G
S-LN2302ALT1G
SOT– 23
APPLICATIONS
●
Power Management in Notebook
●
Portable Equipment
●
Load Switch
●
DSC
3
Ordering Information
Device
LN2302ALT1G
S-LN2302ALT1G
LN2302ALT3G
S-LN2302ALT3G
1
Shipping
Marking
02A
02A
2
3000/Tape& Reel
10000/Tape& Reel
Absolute Maximum Ratings
(T
A
=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150℃)
Pulsed Drain Current
Maximum Body-Diode Continuous Current
T
A
=25℃
Maximum Power Dissipation
Operating Junction Temperature
Maximum Junction-to-Ambient
Thermal Resistance-Junction to Case
*The device mounted on 1in
2
FR4 board with 2 oz copper
T
A
=70℃
P
D
T
J
T≦10 sec
R
thJA
Steady State
R
θJC
70
105
℃/W
T
A
=25℃
T
A
=70℃
I
D
I
DM
I
S
Symbol
V
DSS
V
GSS
Limit
20
±8
2.8
2.2
10
1.6
1.25
0.8
150
77
Unit
V
V
A
A
W
℃
℃/W
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LN2302ALT1G , S-LN2302ALT1G
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Limit
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=0V, V
GS
=±8V
V
DS
=20V, V
GS
=0V
Min
20
0.6
Typ
Max
Unit
STATIC PARAMETERS
V
nA
0.9
1.2
±100
1
I
DSS
Zero Gate Voltage Drain Current
V
DS
=20V, V
GS
=0V
T
J
=55℃
μA
10
6
4
55
65
80
0.75
85
115
130
1.2
V
mΩ
I
D(ON)
On-State Drain Current
a
V
DS
≧5V,
V
GS
= 4.5V
V
DS
≧5V,
V
GS
= 2.5V
V
GS
=4.5V, I
D
= 2.8A
A
R
DS(ON)
Drain-Source On-Resistance
V
GS
=2.5V, I
D
= 2.5A
V
GS
=1.8V, I
D
= 2.2A
V
SD
Diode Forward Voltage
I
S
=1A, V
GS
=0V
DYNAMIC PARAMETERS
Qg
Qgs
Qgd
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
=10V, R
L
=10Ω
V
GEN
=4.5Ω, R
G
=6Ω
V
DS
=10V, V
GS
=0V, f=1MH
Z
V
DS
=10V, V
GS
=4.5V, I
D
=2.8A
9
2.2
3
450
72
22
9
23
38
3
ns
pF
nC
t
d(on)
t
r
t
d(off)
t
f
Notes:
a. Pulse test; pulse width
≦
300us, duty cycle≦ 2%
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
Typical Characteristics (T
J
=25℃ Noted)
LN2302ALT1G , S-LN2302ALT1G
Rev .O 3/5
LESHAN RADIO COMPANY, LTD.
Typical Characteristics (T
J
=25℃ Noted)
LN2302ALT1G , S-LN2302ALT1G
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
LN2302ALT1G , S-LN2302ALT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0830
0.0177
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
2.10
0.45
1.02
2.64
0.60
C
D
H
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 5/5
京公网安备 11010802033920号
EEWORLD
