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AON6980

Description
mosfet 2N-CH 30v 18a/27a 8dfn
Categorysemiconductor    Discrete semiconductor   
File Size479KB,10 Pages
ManufacturerAOS
Websitehttp://www.aosmd.com
Environmental Compliance  
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AON6980 Overview

mosfet 2N-CH 30v 18a/27a 8dfn

AON6980
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Trench Power AlphaMOS (αMOS LV) technology
• Low R
DS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
Q1
30V
28A
< 6.8m
< 10.3m
Q2
30V
36A
< 3.8m
< 4.9m
Applications
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
DFN5X6B
Top View
Bottom View
Top View
Bottom View
PIN1
PIN1
Q2: SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
Orderable Part Number
AON6980
Package Type
DFN 5x6B
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy
V
DS
Spike
Power Dissipation
Power Dissipation
B
Symbol
V
DS
V
GS
T
C
=25°
C
T
C
=100°
C
C
Max Q1
30
±20
28
22
111
18
14
51
13
36
23.5
9.4
3.5
2.2
-55 to 150
Max Q2
30
±12
36
28
144
27
21
60
18
36
32
13
4.1
2.6
Units
V
V
A
I
D
I
DM
I
DSM
I
AS
T
A
=25°
C
T
A
=70°
C
L=0.01mH
10µs
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
A
C
A
A
mJ
V
W
W
°
C
E
AS
V
SPIKE
P
D
P
DSM
T
J
, T
STG
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ Q1
29
55
4.3
Typ Q2
25
50
3
Max Q1
35
66
5.3
Max Q2
30
60
3.8
Units
°
C/W
°
C/W
°
C/W
Rev.1.0: January 2014
www.aosmd.com
Page 1 of 10
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