Rev. 1.41
BSS123
SIPMOS
Small-Signal-Transistor
Feature
•
N-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
100
6
0.17
PG-SOT23
V
Ω
A
R
DS(on)
I
D
3
Drain
pin 3
•
Qualified according to AEC Q101
Gate
pin1
Source
pin 2
2
1
VPS05161
Type
BSS123
BSS123
Package
PG-SOT23
PG-SOT23
Pb-free
Yes
Yes
Tape and Reel Information
L6327: 3000 pcs/reel
L6433: 10000 pcs/reel
Marking
SAs
SAs
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
0.17
0.14
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
0.68
6
±20
Class 1a
0.36
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=0.17A,
V
DS
=80V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
Page 1
2010-05-12
Rev. 1.41
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - ambient
at minimum footprint
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=250µA
BSS123
Symbol
min.
R
thJA
-
Values
typ.
-
max.
350
Unit
K/W
Symbol
min.
V
(BR)DSS
Values
typ.
-
1.4
max.
-
1.8
Unit
100
0.8
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=50µA
V
GS(th)
I
DSS
Zero gate voltage drain current
V
DS
=100V,
V
GS
=0,
T
j
=25°C
V
DS
=100V,
V
GS
=0,
T
j
=150°C
µA
-
-
-
-
-
4
3
0.01
5
10
10
6
nA
Ω
Gate-source leakage current
V
GS
=20V,
V
DS
=0
I
GSS
R
DS(on)
R
DS(on)
-
-
-
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=0.13A
Drain-source on-state resistance
V
GS
=10V,
I
D
=0.17A
Page 2
2010-05-12
Rev. 1.41
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,
V
GS
=10V,
I
D
=0.17A,
R
G
=6Ω
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.14A
V
GS
=0,
V
DS
=25V,
f=1MHz
BSS123
Symbol
Conditions
min.
0.09
-
-
-
-
-
-
-
Values
typ.
0.19
55
8.5
5
2.7
3.1
9.9
25
max.
-
69
10.6
6.3
4
4.6
14.8
37
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
V
DD
=80V,
I
D
=0.17A
-
-
-
-
0.055
0.77
1.78
2.6
0.082 nC
1.15
2.67
-
V
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Q
g
V
DD
=80V,
I
D
=0.17A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=80V,
I
D
= 0.17 A
I
S
T
A
=25°C
-
-
-
-
0.81
27.6
10.5
0.17
0.68
1.2
41.1
15.7
A
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=
I
S
V
R
=50V,
I
F=
l
S
,
di
F
/dt=100A/µs
-
-
-
V
ns
nC
Page 3
2010-05-12
Rev. 1.41
1 Power dissipation
P
tot
=
f
(
T
A
)
0.38
BSS123
BSS123
2 Drain current
I
D
=
f
(
T
A
)
parameter:
V
GS
≥
10 V
BSS123
0.18
W
A
0.32
0.14
0.28
P
tot
I
D
0.1
0.08
0.06
0.04
0.02
0
0
20
40
60
80
100
120
0.24
0.2
0.16
0.12
0.08
0.04
0
0
0.12
°C
160
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
10
1
BSS123
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
3
BSS123
K/W
A
10
2
10
0
/
I
D
=
V
D
S
on
)
t
p = 120.0µs
Z
thJA
10
1
I
D
R
D
S(
1 ms
10
-1
10 ms
10
0
D = 0.50
0.20
10
-1
0.10
0.05
0.02
10
DC
-2
10
-2
single pulse
0.01
10
-3 0
10
10
1
10
2
V
10
3
10
-3 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Page 4
t
p
2010-05-12
Rev. 1.41
5 Typ. output characteristic
I
D
=
f
(
V
DS
)
parameter:
T
j
= 25 °C,
V
GS
0.7
BSS123
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j
= 25 °C,
V
GS
20
A
0.6
0.55
0.5
I
D
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
10V
5V
4.5V
4.1V
3.9V
3.7V
3.5V
3.1V
2.9V
2.3V
Ω
16
14
12
10
8
6
4
2
0
0
2.3V
2.9V
3.1V
3.5V
3.7V
3.9V
4.1V
4.5V
5.0V
10V
0.5
1
1.5
2
2.5
3
3.5
4
V
R
DS(on)
5
0.1
0.2
0.3
0.4
0.5
A
0.7
V
DS
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
T
j
= 25 °C
0.7
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j
= 25 °C
0.4
A
S
0.3
0.5
g
fs
0.4
0.3
0.2
0.1
0
0
I
D
0.25
0.2
0.15
0.1
0.05
0.5
1
1.5
2
2.5
3
3.5
4
V
5
0
0
0.1
0.2
0.3
0.4
0.5
A
0.7
V
GS
Page 5
I
D
2010-05-12
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