APTM120DU15G
Dual common source
MOSFET Power Module
D1
Q1
D2
Q2
V
DSS
= 1200V
R
DSon
= 150m typ @ Tj = 25°C
I
D
= 60A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
G1
G2
S1
S
S2
Features
Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
Max ratings
1200
60
45
240
±30
175
1250
22
50
3000
Unit
V
A
V
m
W
A
APTM120DU15G– Rev 2 October, 2012
T
c
= 25°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM120DU15G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V,V
DS
= 1200V
V
GS
= 0V,V
DS
= 1000V
T
j
= 25°C
T
j
= 125°C
Min
Typ
V
GS
= 10V, I
D
= 30A
V
GS
= V
DS
, I
D
= 10mA
V
GS
= ±30 V, V
DS
= 0V
150
3
Max
500
3000
175
5
±250
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 600V
I
D
= 60A
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 800V
I
D
= 60A
R
G
= 1.2
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 800V
I
D
= 60A, R
G
= 1.2Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 800V
I
D
= 60A, R
G
= 1.2Ω
Min
Typ
20.6
3.08
0.52
748
96
480
20
15
160
45
3.96
2.74
6.26
3.43
mJ
mJ
ns
nC
Max
Unit
nF
Source - Drain diode ratings and characteristics
Symbol Characteristic
I
S
Continuous Source current
(Body diode)
V
SD
Diode Forward Voltage
dv/dt Peak Diode Recovery
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Test Conditions
Tc = 25°C
Tc = 80°C
V
GS
= 0V, I
S
= - 60A
I
S
= - 60A, V
R
= 600V
di
S
/dt = 400A/µs
1291
116
Min
Typ
Max
60
45
1.3
10
Unit
A
V
V/ns
ns
µC
www.microsemi.com
2–7
APTM120DU15G– Rev 2 October, 2012
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 60A
di/dt
700A/µs
V
R
V
DSS
T
j
150°C
APTM120DU15G
Thermal and package characteristics
Symbol
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
4000
-40
-40
-40
3
2
Typ
Max
0.1
150
125
100
5
3.5
300
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
For terminals
M6
M5
SP6 Package outline
(dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM120DU15G– Rev 2 October, 2012
www.microsemi.com
3–7
APTM120DU15G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
Thermal Impedance (°C/W)
0.1
0.08
0.06
0.04
0.02
0.9
0.7
0.5
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0
0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
200
V
GS
=15, 10 & 8V
Transfert Characteristics
320
280
I
D
, Drain Current (A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
I
D
, Drain Current (A)
160
120
80
40
0
0
5
10
15
20
7V
6.5V
240
200
160
120
80
40
0
T
J
=25°C
T
J
=125°C
T
J
=-55°C
6V
5.5V
5V
25
30
0
1
2
3
4
5
6
7
8
9
V
DS
, Drain to Source Voltage (V)
R
DS(on)
vs Drain Current
I
D
, DC Drain Current (A)
Normalized to
V
GS
=10V @ 30A
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
70
60
50
40
30
20
10
0
25
50
75
100
125
150
APTM120DU15G– Rev 2 October, 2012
R
DS
(on) Drain to Source ON Resistance
1.4
1.3
1.2
1.1
1
0.9
0.8
0
V
GS
=10V
V
GS
=20V
40
80
120
160
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
www.microsemi.com
4–7
APTM120DU15G
R
DS
(on), Drain to Source ON resistance
(Normalized)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
V
GS
(TH), Threshold Voltage
(Normalized)
I
D
, Drain Current (A)
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
V
GS
, Gate to Source Voltage (V)
100000
Ciss
C, Capacitance (pF)
10000
Coss
14
12
10
8
6
4
2
0
0
160
320
480
640
800
960
Gate Charge (nC)
APTM120DU15G– Rev 2 October, 2012
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50 75 100 125 150
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area
V
GS
=10V
I
D
=30A
1000
100µs
100
limited by R
DS
on
1ms
10ms
10
Single pulse
T
J
=150°C
T
C
=25°C
1
1
1200
10
100
1000
V
DS
, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
I
D
=60A
T
J
=25°C
V
DS
=240V
V
DS
=600V
V
DS
=960V
1000
Crss
100
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
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5–7
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