Am29F016B
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s
5.0 V
±
10%, single power supply operation
— Minimizes system level power requirements
s
Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29F016 device
s
High performance
— Access times as fast as 70 ns
s
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
time to active mode)
s
Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
s
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
s
Minimum 1,000,000 program/erase cycles per
sector guaranteed
s
20-year data retention at 125
°
C
— Reliable operation for the life of the system
s
Package options
— 48-pin and 40-pin TSOP
— 44-pin SO
— Known Good Die (KGD)
(see publication number 21551)
s
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
s
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
s
Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
s
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
s
Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21444
Rev:
D
Amendment/0
Issue Date:
November 16, 1999
GENERAL DESCRIPTION
The Am29F016B is a 16 Mbit, 5.0 volt-only Flash mem-
ory organized as 2,097,152 bytes. The 8 bits of data
appear on DQ0–DQ7. The Am29F016B is offered in
48-pin and 40-pin TSOP, and 44-pin SO packages. The
device is also available in Known Good Die (KGD)
form. For more information, refer to publication number
21551. This device is designed to be programmed
in-system with the standard system 5.0 volt V
CC
sup-
ply. A 12.0 volt V
PP
is not required for program or erase
operations. The device can also be programmed in
standard EPROM programmers.
This device is manufactured using AMD’s 0.32 µm pro-
cess technology, and offers all the features and bene-
fits of the Am29F016, which was manufactured using
0.5 µm process technology.
The standard device offers access times of 70, 90, 120,
and 150 ns, allowing high-speed microprocessors to
operate without wait states. To eliminate bus conten-
tion, the device has separate chip enable (CE#), write
enable (WE#), and output enable (OE#) controls.
The device requires only a
single 5.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard.
Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the
Embedded Erase
algorithm—an internal algorithm that automatically pre-
programs the array (if it is not already programmed) be-
fore executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits.
After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the
standby
mode.
Power consumption is greatly reduced in
this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
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Am29F016B
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