100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/
or -55°C options, refer to
SiT8919
and
SiT8921
Low power consumption of 4.9 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
Field Programmable
Oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Ideal for GPON/EPON, network switches, routers,
servers, embedded systems
Ideal for Ethernet, PCI-E, DDR, etc.
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Min.
115
-20
-25
-50
Operating Temperature Range
T_use
-20
-40
Supply Voltage
Vdd
1.62
2.25
2.52
2.7
2.97
2.25
Current Consumption
Idd
–
–
–
OE Disable Current
Standby Current
I_OD
I_std
–
–
–
–
–
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
45
–
–
–
Output High Voltage
Output Low Voltage
VOH
VOL
90%
–
Typ.
–
–
–
–
–
–
1.8
2.5
2.8
3.0
3.3
–
6.2
5.5
4.9
–
–
2.6
1.4
0.6
–
1
1.3
0.8
–
–
Max.
137
+20
+25
+50
+70
+85
1.98
2.75
3.08
3.3
3.63
3.63
7.5
6.4
5.6
4.2
4.0
4.3
2.5
1.3
55
2
2.5
2
–
10%
Unit
MHz
ppm
ppm
ppm
°C
°C
V
V
V
V
V
V
mA
mA
mA
mA
mA
A
A
A
%
ns
ns
ns
Vdd
Vdd
No load condition, f = 125 MHz, Vdd = 2.8V, 3.0V, 3.3V or
2.25 to 3.63V
No load condition, f = 125 MHz, Vdd = 2.5V
No load condition, f = 125 MHz, Vdd = 1.8V
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
Vdd = 1.8V, OE = GND, Output in high-Z state
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
̅ ̅̅
ST = GND, Vdd = 2.5V, Output is weakly pulled down
̅ ̅̅
ST = GND, Vdd = 1.8V, Output is weakly pulled down
̅ ̅̅
All Vdds
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
Inclusive of Initial tolerance at 25°C, 1
st
year aging at 25°C,
and variations over operating temperature, rated power
supply voltage and load.
Condition
Frequency Range
Frequency Stability and Aging
Operating Temperature Range
Extended Commercial
Industrial
Contact
SiTime
for 1.5V support
Supply Voltage and Current Consumption
LVCMOS Output Characteristics
Rev 1.04
January 30, 2018
www.sitime.com
SiT8009B
High Frequency, Low Power Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
Symbol
Min.
Typ.
–
–
87
Max.
–
30%
150
Unit
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE logic high or logic low, or ST logic high
Condition
Input Characteristics
VIH
VIL
Z_in
70%
–
50
2
Startup Time
Enable/Disable Time
Resume Time
RMS Period Jitter
T_start
T_oe
T_resume
T_jitt
–
–
–
–
–
Peak-to-peak Period Jitter
T_pk
–
–
RMS Phase Jitter (random)
T_phj
–
–
Vdd
Vdd
k
–
–
Pin 1, ST logic low
̅ ̅̅
M
Startup and Resume Timing
–
–
–
5
122
5
Jitter
1.9
1.8
12
14
0.5
1.3
3
4
25
30
0.9
2
ps
ps
ps
ps
ps
ps
f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 125 MHz, Vdd = 1.8V
f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 125 MHz, Vdd = 1.8V
Integration bandwidth = 900 kHz to 7.5 MHz
Integration bandwidth = 12 kHz to 20 MHz
ms
ns
ms
Measured from the time Vdd reaches its rated minimum value
f = 137 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Measured from the time ST pin crosses 50% threshold
̅ ̅̅
Table 2. Pin Description
Pin
Symbol
[1]
Functionality
Output Enable
H : specified frequency output
L: output is high impedance. Only output driver is disabled.
H
[1]
: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open
[1]
: Specified frequency
output. Pin 1 has no function.
Electrical ground
Oscillator output
Power supply voltage
[2]
OE/ST/NC
Top View
1
OE/ST /NC
̅ ̅̅
Standby
No Connect
2
3
4
GND
OUT
VDD
Power
Output
Power
Figure 1. Pin Assignments
Notes:
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
̅ ̅̅
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.04
Page 2 of 17
www.sitime.com
SiT8009B
High Frequency, Low Power Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free
soldering guidelines)
Junction Temperature
[3]
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[4]
Package
7050
5032
3225
2520
2016
Note:
4. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
JA, 4 Layer Board
(°C/W)
142
97
109
117
152
JA, 2 Layer Board
(°C/W)
273
199
212
222
252
JC, Bottom
(°C/W)
30
24
27
26
36
Table 5. Maximum Operating Junction Temperature
[5]
Max Operating Temperature (ambient)
70°C
85°C
Maximum Operating Junction Temperature
80°C
95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev 1.04
Page 3 of 17
www.sitime.com
SiT8009B
High Frequency, Low Power Oscillator
Test Circuit and Waveform
[6]
Vdd
Vout
Test Point
tr
4
Power
Supply
0.1 uF
1
2
3
15pF
(including probe
and fixture
capacitance)
tf
80% Vdd
50%
20% Vdd
High Pulse
(TH)
Period
Low Pulse
(TL)
Vdd
OE/ST Function
1 kΩ
Figure 2. Test Circuit
Note:
6. Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 3. Waveform
Timing Diagrams
90% Vdd
Vdd
Vdd
50% Vdd
[7]
Pin 4 Voltage
T_start
No Glitch
during start up
ST Voltage
T_resume
CLK Output
HZ
T_start: Time to start from power-off
CLK Output
HZ
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ ST̅ Mode)
̅ ̅
Figure 5. Standby Resume Timing ( ST̅ Mode Only)
̅ ̅
Vdd
50% Vdd
OE Voltage
T_oe
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
T_oe: Time to re-enable the clock output
CLK Output
HZ
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Note:
7. SiT8009 has “no runt” pulses and “no glitch” output during startup or resume.
[i=s]This post was last edited by wsmysyn on 2016-4-16 11:00[/i] [align=left][color=rgb(62, 62, 62)](From: Semiconductor Industry Observation)[/color][/align][align=left][color=rgb(62, 62, 62)]We are ...
[i=s]This post was last edited by dontium on 2015-1-23 12:57[/i]When learning analog circuits, these circuits are experiments that must be learned. I still remember the scene when I first learned anal...
Platform: A4 + WinCE 6.0. When the application uses overlay to draw some interfaces, after the development board is reset, all programs that use overlay to draw interfaces work normally, and the inter...
In June 2014, the Ministry of Industry and Information Technology issued 4G FD-LTE licenses to China Unicom and China Telecom. Together with the 4G TD-LTE licenses issued to China Mobile, China Uni...[Details]
introduction
The concept of the smart home is gradually developing and gaining market acceptance. We believe its ultimate form lies in the interconnection of all home appliances through open i...[Details]
According to Nikkei, a survey found that global electric vehicle battery supply is expected to reach more than three times the required quantity due to
cooling
demand for electric vehicles,...[Details]
On August 20, Geely announced its focus on "One Cockpit". Through a unified AI OS architecture, a unified AI Agent, and a unified user ID, it will achieve an All-in-One AI cockpit, create the first...[Details]
Tiantai Robot's official Weibo account announced on the evening of August 20 that Tiantai Robot Co., Ltd., together with strategic partners including Shandong Future Robot Technology Co., Ltd., Sha...[Details]
Methods of DC motor speed regulation:
1. The voltage regulator can be used to change the input voltage and speed directly, which is often used for large kilowatt-level motors.
2. Thyristo...[Details]
Analog Devices held a third-quarter fiscal 2025 earnings conference call. Vincent T. Roche, CEO and Chairman of the Board, and Richard C. Puccio, Executive Vice President and Chief Financial Office...[Details]
High-definition media consumption is experiencing a dual growth: an increase in the number of consumers and a transition to higher-definition content. This growth is driven by increasingly widespre...[Details]
Hair dryer structure and working principle: It is mainly used for drying and shaping hair, but it can also be used for local drying, heating and treatment in laboratories, physiotherapy rooms, ind...[Details]
I believe everyone has heard of memory. If your computer is slow, your experts may recommend upgrading it to a larger capacity. But what exactly is computer memory used for? Why does memory capacit...[Details]
Renesas Electronics introduces a new USB-C power solution with an innovative three-level topology.
Improve performance while reducing system size
New solution combines excel...[Details]
As the power density of modern electronic systems continues to increase, effective thermal management has become critical to ensuring system performance, reliability, and longevity—especially in hi...[Details]
Introduction: Traditionally, lead-acid batteries have primarily been used to provide backup power and power regulation based on location. In typical applications, the battery's actual use (discharg...[Details]
As the electric vehicle industry continues to surge in today's society, while people are concerned about the appearance and interior of new energy vehicles, they are also concerned about the classi...[Details]
As in-vehicle audio and video entertainment features become increasingly diverse, the demand for digital transmission of audio and video information is urgent. Traditional protocols such as IEEE 13...[Details]
Integrated technical exchanges
京公网安备 11010802033920号
EEWORLD
