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MLL1.4KESD24

Description
Trans Voltage Suppressor Diode, 400W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size200KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MLL1.4KESD24 Overview

Trans Voltage Suppressor Diode, 400W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2

MLL1.4KESD24 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1439152187
Parts packaging codeDO-213AA
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Minimum breakdown voltage26.7 V
Shell connectionISOLATED
Maximum clamping voltage53.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage24 V
Maximum reverse current1 µA
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWRAP AROUND
Terminal locationEND
MLL1.4KESD5.0 thru MLL1.4KESD170CA
SURFACE MOUNT TVS
SCOTTSDALE DIVISION
DESCRIPTION
These small surface mount TVS devices feature the ability to clamp
dangerous high voltage short-term transients such as produced by directed
or radiated electrostatic discharge phenomena before entering sensitive
component regions of a circuit design. They are small economical transient
voltage suppressors targeted primarily for short-term transients below a few
microseconds while still achieving significant peak-pulse-power capability
as illustrated in Figure #1.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-213AA
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Excellent protection in clamping direct ESD level
transients in excess of 15,000 V per MIL-STD-750,
Method 1020 (approx. 150 ns exponential wave)
Absorbs ESD level transients* of 1400 Watts per
MIL-STD-750, Method 1020 (approx. 150 ns
exponential wave, or one microsecond transients up
to 400 watts. See Figure #1 and #2 for overall
transient Peak Pulse Power.
Clamps Transients in less than 100 picoseconds
Working Stand-off Voltage range of 5 V to 170 V
Hermetic DO-213AA Package. Also available in
axial-leaded DO-35 package (see separate data
sheet for 1.4KESD5.0 series)
APPLICATIONS / BENEFITS
Protects Sensitive circuits from short duration fast
rise time transients such as Electrostatic Discharge
(ESD) or Electrical Fast Transients (EFT)
Low inherent capacitance for high-frequency
applications (See Figure #4)
Small surface mount foot print
Bidirectional features available by adding a “C” or
“CA” suffix
MAXIMUM RATINGS
400 Watts for One Microsecond Square Wave or
1400 watts per ESD Wave form of MIL-STD-750,
method 1020
See Surge Rating curves in Figures #1, 2 and 3
Operating and storage temperature –65
o
C to 175
o
C
THERMAL RESISTANCE: 150
o
C/W junction to end
cap
DC power dissipation 500 mW at T
EC
100
o
C
Derate at 2.3 W/
o
C above 25
o
C for P
PP
(1µs) and at
o
o
6.67 mW/ C above 100 C for dc power
Forward Surge Current 50 amps for 1µs at T
L
= 25
o
C
(rise time > 100 ns)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass DO-213AA surface
mount package
TERMINALS: Leads, tin-lead plated solderable per
MIL-STD-750, method 2026
POLARITY: Banded end is cathode
WEIGHT: 0.04 grams (typical)
MARKING: Cathode band only
TAPE & REEL option: Standard per EIA-481-B (add
“TR” suffix to part number)
See package dimension on last page
1.4KESD5.0 – 1.4KESD170A
Copyright
2003
10-06-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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